METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
There is provided a method of fabricating a semiconductor device including: forming an insulating film on a semiconductor substrate; forming a pad electrode on the insulating film; forming a protective film on the pad electrode; forming, on the protective film, a resist equipped with an open portion in a first region corresponding to part of the pad electrode; by using the resist as a mask, etching the protective film and etching the first region of part of the pad electrode to a predetermined depth; etching the protective film on a second region that surrounds the first region of the pad electrode; and removing the resist.
1 . A method of fabricating a semiconductor device comprising:
forming an insulating film on a semiconductor substrate;
forming a pad electrode on the insulating film;
forming a protective film on the pad electrode;
forming, on the protective film, a resist equipped with an open portion in a first region corresponding to part of the pad electrode;
by using the resist as a mask, etching the protective film and etching the first region of part of the pad electrode to a predetermined depth;
etching the protective film on a second region that surrounds the first region of the pad electrode; and
removing the resist.
2 . A semiconductor device comprising:
a semiconductor substrate;
an insulating film that is formed on the semiconductor substrate;
a pad electrode that is formed on the insulating film and is equipped with a recessed portion; and
a protective film that is formed on the pad electrode in such a way that a region including the recessed portion and an area around the recessed portion is exposed.
3 . A semiconductor device comprising:
a semiconductor substrate;
an insulating film that is formed on the semiconductor substrate;
a pad electrode that is formed on the insulating film and is equipped with a first region of a first thickness, and a second region that has a second thickness thicker than the first thickness and surrounds the first region; and
a protective film that is equipped with an open portion in a region extending from the first region to part of the second region and is formed on the insulating film and the pad electrode.
4 . The semiconductor device according to claim 3 , further comprising a contact that interconnects the insulating film and the second region of the pad electrode.