Semiconductor device and method of manufacturing the same
View Patent ↗A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film.
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
(a) forming a first insulating film on a semiconductor substrate;
(b) forming an interconnect groove in the first insulating film;
(c) forming a first interconnect in the interconnect groove;
(d) forming a protective film on the first insulating film and the first interconnect; and
after the step (d), (e) exposing a surface of the protective film to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film.
2. The method of claim 1 , wherein
the step (e) is performed by exposing the surface of the protective film to a silicon compound or a germanium compound.
3. The method of claim 1 , wherein
the step (e) includes a sub-step of chemically activating the reactive gas.
4. The method of claim 1 , wherein
the step (e) includes a sub-step of chemically activating the reactive gas by ionizing the reactive gas.
5. The method of claim 1 , wherein
the step (e) includes a sub-step of physically activating the reactive gas.
6. The method of claim 1 , wherein
the step (e) includes a sub-step of physically activating the reactive gas by imparting kinetic energy to the reactive gas.
7. The method of claim 1 , further comprising the steps of:
(f) forming a second insulating film on the protective film;
(g) forming a via hole inside the second insulating film; and
(h) filling the via hole with a metal material to form a via, and forming a second interconnect so that the second interconnect is connected to the via.
8. The method of claim 1 , wherein
the protective film is a silicon carbonitride film.
9. The method of claim 1 , further comprising the step of
(c1) forming a cover layer in the upper part of the first interconnect after the step (c) and before the step (d).
10. The method of claim 9 , wherein
a main material of the cover layer is nickel, nickel alloy, cobalt, or cobalt alloy.
11. The method of claim 1 , further comprising the step of
(e1) exposing the surface of the protective film to plasma after the step (e).
12. The method of claim 11 , wherein
the plasma is generated in an atmosphere including a nitrogen compound.
13. The method of claim 1 , further comprising the step of
(e2) exposing the surface of the protective film to ultraviolet radiation after the step (e).
14. The method of claim 1 , further comprising the step of
(e3) forming a stopper film on the protective film after the step (e).
15. The method of claim 14 , wherein
the stopper film is an oxygen doped silicon carbide film or a silicon nitride film.
16. The method of claim 1 , wherein
the reaction layer is a silicon compound layer or a germanium compound layer.
17. The method of claim 1 , wherein
a main material of the first interconnect is aluminum, aluminum alloy, copper, copper alloy, silver, silver alloy, gold, or gold alloy.
18. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a first insulating film on a semiconductor substrate;
forming an interconnect groove in the first insulating film;
forming a first interconnect in the interconnect groove; and
forming a reaction layer in an upper part of the first interconnect, wherein
the reaction layer is formed under a condition where a supply rate controls a reaction.
19. The method of claim 18 , wherein
the reaction layer is a silicon compound layer or a germanium compound layer.