Semiconductor device manufacturing method
View Patent ↗A gate electrode is formed on a surface of a semiconductor substrate. A resist mask is formed that covers both end faces of the gate electrode in a gate width direction intersecting a gate length direction. Impurity ions are implanted into the semiconductor substrate in an implantation direction having a gate length direction component and a gate width direction component, to form a low-concentration impurity layer overlapping with the gate electrode at both sides of the gate electrode in the surface of the semiconductor substrate. A sidewall is formed that covers a side surface of the gate electrode. Impurity ions are implanted using the gate electrode and the sidewall as a mask, to form a high-concentration impurity layer apart from the gate electrode at both sides of the gate electrode on the surface of the semiconductor substrate.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode on a surface of a semiconductor substrate;
forming a resist mask covering both end faces of the gate electrode in a gate width direction intersecting a gate length direction;
forming a low-concentration impurity layer in the surface of the semiconductor substrate so as to overlap with the gate electrode at both sides of the gate electrode by implanting impurity ions into the semiconductor substrate in an implantation direction having a gate length direction component and a gate width direction component;
forming a sidewall covering a side surface of the gate electrode; and
forming a high-concentration impurity layer in the surface of the semiconductor substrate so as to be apart from the gate electrode at both sides of the gate electrode by implanting impurity ions using the gate electrode and the side wall as a mask,
wherein the resist mask has a covering thickness sufficient to prevent a penetration into a region immediately under the gate electrode of impurity ions implanted in an implantation direction having the gate width direction component at the step of forming the low-concentration impurity layer.
2. The manufacturing method of claim 1 , wherein
at the step of forming the low-concentration impurity layer, the impurity ions are implanted at a predetermined tilt angle with respect to the surface of the semiconductor substrate.
3. A method of manufacturing a semiconductor device including a plurality of semiconductor elements each having a gate length direction different from one another, the method comprising the steps of:
forming a plurality of gate electrodes corresponding respectively to the plurality of semiconductor elements on a surface of a semiconductor substrate;
forming a resist mask covering both end faces of each of the plurality of gate electrodes in a gate width direction intersecting the gate length direction;
forming a low-concentration impurity layer in the surface of the semiconductor substrate so as to overlap with each of the plurality of gate electrodes at both sides of the each of the plurality of gate electrodes by implanting impurity ions into the semiconductor substrate in an implantation direction having a gate length direction component and a gate width direction component;
forming a sidewall covering a side surface of each of the plurality of gate electrodes; and
forming a high-concentration impurity layer in the surface of the semiconductor substrate so as to be apart from each of the plurality of gate electrodes at both sides of the each of the plurality of gate electrodes by implanting impurity ions using the plurality of gate electrodes and the side walls as a mask,
wherein the resist mask has a covering thickness sufficient to prevent a penetration into a region immediately under the gate electrode of impurity ions implanted in an implantation direction having the gate width direction component at the step of forming the low-concentration impurity layer.
4. The manufacturing method of claim 3 , wherein
the semiconductor device includes as the semiconductor elements an n-type MOSFET and a p-type MOSFET, wherein
the step of forming a low-concentration impurity layer includes a step of forming a resist mask covering either one of the n-type MOSFET and the p-type MOSFET, and wherein
the resist mask covering both end faces of each of the gate electrodes and the resist mask covering either one of the n-type MOSFET and the p-type MOSFET are formed at the same step.
5. The manufacturing method of claim 3 , wherein
at the step of forming the low-concentration impurity layer, the impurity ions are implanted at a predetermined tilt angle with respect to the surface of the semiconductor substrate.