IP Library › Patent Application 13284831
Patent Application
App. No. 13/284,831

Y-Doped Barium Strontium Titanate For Stoichiometric Thin Film Growth

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Quick Facts
Patent No.
US None
App. No.
13/284,831
Abstract

Disclosed is a process for generating thin-film barium strontium titanate (“BST”) having a lattice comprised of a plurality of A lattice sites and a B lattice site, in which a yttrium may be found at a location of at least one location of the plurality of A lattice sites or the B lattice site. In one embodiment, the plurality of A lattice sites comprises a location for at least one from a group consisting of barium and strontium. In one embodiment, the B lattice site comprises a location for a titanium. A capacitor having the inventive Y-doped BST dielectric is also disclosed.

Claims (15)

1 . A thin-film of Y-doped barium strontium titanate (“BST”), comprising:

a plurality of A lattice sites and B lattice sites, the plurality of A lattice sites comprising locations for at least one from a group consisting of barium and strontium and the B lattice sites comprising locations for titanium; and

at least one yttrium atom of the Y-dopant located in at least one of the A lattice sites or the B lattice sites.

2 . The thin-film BST of claim 1 , wherein the yttrium atoms are preferentially located at the B lattice sites in response to the ratio of ((Ba+Sr)/Ti)<1.

3 . The thin-film BST of claim 1 , wherein the yttrium atoms are preferentially located at the A lattice sites in response to the ratio of ((Ba+Sr)/Ti)>1.

4 . The thin-film BST of claim 1 , further comprising a substrate for the thin film of Y-doped BST, wherein the substrate comprises Al 2 O 3

5 . The thin-film BST of claim 4 , wherein the substrate comprises sapphire

6 . The thin-film BST of claim 1 , wherein the BST thin-film is derived from a yttrium oxide doped BST target.

7 . A voltage variable capacitor, comprising:

first and second conductors; and

a Y-doped BST dielectric between the first and second conductors.

8 . The voltage variable capacitor of claim 7 , wherein the dielectric is a thin film dielectric.

9 . The voltage variable capacitor of claim 8 , wherein the dielectric is less than 50 microns thick.

10 . The voltage variable capacitor of claim 9 , wherein the Y-doped BST dielectric has between 0.10% and 10% Y by atomic weight.

11 . The voltage variable capacitor of claim 9 , wherein Y-doped BST dielectric has between 80% and 120% Ti by atomic weight.