The present disclosure relates to a base plate, for example, for a power module, including a matrix formed of metal, for example, aluminum, wherein at least two reinforcements are provided in the matrix next to each other, and wherein the reinforcements are spaced apart from each other.
1. A base plate for mounting on a heat sink of a power module, the baseplate comprising:
a flexible, continuous matrix formed of metal; and
at least two rigid reinforcements provided in the matrix adjacent to each other wherein the reinforcements are spaced apart from each other via portions of the matrix,
wherein an area of the at least two reinforcements, the matrix is configured to independently react to a surface topology of the heat sink for close contact with the surface of the heat sink.
2. The base plate according to claim 1 , comprising:
a plurality of through holes for securing the base plate to a heat sink, the through holes being provided in the matrix along a length and a width of the base plate, wherein no reinforcements are provided between the through holes along the width of the base plate.
3. The base plate according to claim 1 , wherein the at least two reinforcements are formed from silicium carbide.
4. The base plate according to claim 1 , wherein the reinforcements are arranged with a distance from each other in a range of 1 mm to 5 mm.
5. The base plate according to claim 1 , wherein the base plate is at least partly bowed.
6. The base plate according to claim 5 , wherein a maximum bow deflection height is 100 μm±50 μm.
7. The base plate according to claim 5 , wherein the base plate is bowed in a width direction.
8. The base plate according to claim 1 , wherein all of the reinforcements together have a dimension of at least 70% of a total dimension of the base plate.
9. The base plate according to claim 1 , wherein the matrix is a metal layer formed on and between the reinforcements.
10. The base plate according to claim 1 , wherein a maximum value of a coefficient of thermal expansion of the base plate is in a range of 8-12 ppm/k.
11. The base plate according to claim 1 , wherein the matrix comprises aluminium.
12. The base plate according to claim 2 , wherein the at least two reinforcements are formed from silicium carbide.
13. The base plate according to claim 1 , wherein the reinforcements are arranged with a distance from each other of about 3 mm.
14. The base plate according to claim 1 , wherein all of the reinforcements together have a dimension of at least 85% of a total dimension of the base plate.
15. The base plate according to claim 1 , wherein a maximum value of a coefficient of thermal expansion of the base plate is 10 ppm/k.
16. The base plate according to claim 8 , wherein a maximum value of a coefficient of thermal expansion of the base plate is in a range of 8-12 ppm/k.
17. The base plate according to claim 16 , wherein the matrix is formed as a metal layer formed on and between the reinforcements.
18. The base plate according to claim 17 , in combination with:
a heat sink; and
a substrate having a semiconductor device.
19. The base plate according to claim 18 , wherein the semiconductor device includes an insulated gate bipolar transistor (IGBT) of a power module.
20. The base plate according to claim 6 , wherein a bow is formed only over the width of the base plate.