Semiconductor device

1. A semiconductor device, comprising:

a semiconductor substrate;

a first layer disposed above the semiconductor substrate and forming a plurality of first interconnect blocks, each of the first interconnect blocks including a first interconnect with a first potential, the first interconnect extending in at least two or more directions, and a second interconnect with a second potential different from the first potential, the second interconnect extending in at least two or more directions; and

a second layer disposed above or under the first layer, the second layer including a third interconnect which connects to the first interconnect of each of two or more adjacent first interconnect blocks, and a fourth interconnect which connects to the second interconnect of each of two or more adjacent first interconnect blocks, wherein:

the second layer forms a plurality of second interconnect blocks in each of which the third interconnect and the fourth interconnect are arranged,

an arrangement of the first interconnect and the second interconnect in one first interconnect block is different from an arrangement of the first interconnect and the second interconnect in another first interconnect block, and

the first interconnect in one first inter connect block is arranged in parallel to and adjacent to the second interconnect in an adjacent first interconnect block which is adjacent to the one first interconnect block.

2. The semiconductor device of claim 1 , wherein

each of the third interconnect and the fourth interconnect extends in two or more directions.

3. The semiconductor device of claim 1 , wherein

the first interconnect and the third interconnect have different resistances, and

the second interconnect and the fourth interconnect have different resistances.

4. The semiconductor device of claim 1 , wherein

the first interconnect and the third interconnect are electrically connected to each other via a first contact, and

the second interconnect and the fourth interconnect are electrically connected to each other via a second contact.

5. The semiconductor device of claim 1 , wherein

each of the first interconnect and the second interconnect is in the shape of a ring.

6. The semiconductor device of claim 1 , wherein

each of the first interconnect and the second interconnect is in the shape of a spiral.

7. The semiconductor device of claim 1 , wherein

a signal interconnect is arranged between the first interconnect blocks of the first layer.

8. The semiconductor device of claim 1 , wherein

the semiconductor substrate is in the shape of a rectangle when viewed from above, and

the plurality of first interconnect blocks are arranged in a direction along sides of the semiconductor substrate.

9. The semiconductor device of claim 1 , wherein

the semiconductor substrate is in the shape of a rectangle when viewed from above, and

the plurality of first interconnect blocks are arranged in an oblique direction relative to the direction along sides of the semiconductor substrate.

10. The semiconductor device of claim 9 , wherein

the semiconductor substrate is in the shape of a square when viewed from above, and

the plurality of first interconnect blocks are arranged in a direction 45 degrees from the direction along sides of the semiconductor substrate.

11. The semiconductor device of claim 1 , wherein

each of the third interconnect and the fourth interconnect is in the shape of a ring.