ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes a substrate having a plurality of organic light emitting elements thereon and a thin film encapsulation layer on the substrate. The thin film encapsulation layer covers the organic light emitting elements, and the thin film encapsulation layer includes a first porous inorganic layer and a second inorganic layer on the first porous inorganic layer.
1 . An organic light emitting diode display, comprising:
a substrate having a plurality of organic light emitting elements thereon; and
a thin film encapsulation layer on the substrate, the thin film encapsulation layer covering the organic light emitting elements,
the thin film encapsulation layer including a first porous inorganic layer and a second inorganic layer on the first porous inorganic layer.
2 . The organic light emitting diode display of claim 1 , wherein the first porous inorganic layer is made of silicon carbon nitride (SiCN) and the second inorganic layer is made of silicon nitride (SiN).
3 . The organic light emitting diode display of claim 2 , wherein the first porous inorganic layer is one of a plurality of first porous inorganic layers in the thin film encapsulation layer and the second inorganic layer is one of a plurality of second inorganic layers in the thin film encapsulation layer, and the plurality of first porous inorganic layers and the plurality of second inorganic layers are alternately stacked in the thin film encapsulation layer.
4 . The organic light emitting diode display of claim 2 , wherein a layer density of the first porous inorganic layer is about 1.4 g/cm 3 to about 1.8 g/cm 3 .
5 . The organic light emitting diode display of claim 2 , wherein a layer density of the second inorganic layer about 2.0 g/cm 3 to about 3.5 g/cm 3 .
6 . The organic light emitting diode display of claim 2 , wherein a refractive index of the first porous inorganic layer is about 1.5 to about 1.75.
7 . The organic light emitting diode display of claim 2 , wherein a thickness of the first porous inorganic layer is about 0.5 μm to about 1.5 μm.
8 . The organic light emitting diode display of claim 2 , wherein a thickness of the second inorganic layer is about 0.5 μm to about 1.5 μm.
9 . A method for manufacturing an organic light emitting diode display, the method comprising:
forming a first porous inorganic layer that covers a plurality of organic light emitting elements on a substrate having the organic light emitting elements formed thereon; and
forming a second inorganic layer that covers the first porous inorganic layer.
10 . The method of claim 9 , wherein the first porous inorganic layer is made of silicon carbon nitride (SiCN) and the second inorganic layer is made of silicon nitride (SiN).
11 . The method of claim 9 , wherein the first porous inorganic layer is formed by mixing materials including silane (SiH 4 ), ammonia (NH 3 ), nitrogen (N 2 ), hydrogen (H 2 ), and acetylene (C 2 H 2 ).
12 . The method of claim 9 , wherein the second inorganic layer is formed by mixing materials including silane (SiH 4 ), ammonia (NH 3 ), nitrogen (N 2 ), and hydrogen (H 2 ).