Ion implant apparatus and a method of implanting ions
View Patent ↗Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H + , is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.
1. An ion implant apparatus comprising:
a rotary scan assembly having an axis of rotation and a periphery;
a plurality of substrate holders distributed about said periphery, said substrate holders arranged to hold respective planar substrates at a common substrate tilt angle to define a total cone angle about said axis of rotation which is less than 60°;
and a beam line assembly to provide a beam of ions for implantation in said planar substrates on said substrate holders, said beam line assembly comprising in sequence in an ion beam direction: an ion source, an ion accelerator effective to accelerate ions from said ion source to produce an accelerated beam having a desired implant energy of at least 500 keV, and a beam bending magnet having a beam inlet to receive said accelerated beam; wherein said ion source, said accelerator and said beam inlet defining a beam acceleration path which is linear from said ion source to said beam inlet of said beam bending magnet;
wherein said beam line assembly is arranged to direct said beam in a predetermined ion implant direction along a final beam path, which is at an angle of at least 45° to said axis of rotation; and
wherein said planar substrates on said substrate holders successively intercept said final beam path in a travel direction as said rotary scan assembly rotates.
2. Ion implant apparatus as claimed in claim 1 , wherein said beam line assembly includes an analyzer magnet which is located after said beam acceleration path and is operative to produce an angular separator in said accelerated beam between ions of different mass/charge ratios (m/e).
3. Ion implant apparatus as claimed in claim 2 ,
wherein said analyzer magnet is operative to direct ions having an m/e which is desired for implantation in said predetermined ion implant direction along said final beam path,
wherein said implant apparatus further comprises an ion beam dump which is mounted on said rotary scan assembly and forms an annular beam dump region which rotates with said rotary scan assembly, and
wherein said analyzer magnet is operative to direct ions having an m/e greater than said desired m/e towards said annular beam dump region.
4. Ion implant apparatus as claimed in claim 1 , wherein said beam bending magnet is a beam scanner magnet operative to deflect said accelerated beam at a repetition rate through a range of deflection angles, to produce a scanned beam such that said final beam path is scanned transversely relative to said travel direction of said substrate holders.
5. Ion implant apparatus as claimed in 4 , wherein said beam line assembly includes an analyzer magnet which is located to receive said scanned beam from said beam scanner magnet over said range of deflection angles and is operative to produce an angular separation between beam ions of different mass/charge ratios (m/e).
6. Ion implant apparatus as claimed in 5 , wherein said analyzer magnet is operative to direct ions having an m/e which is desired for implantation in a collimated scanned beam in said predetermined ion implant direction along said final beam path.
7. Ion implant apparatus as claimed in claim 6 , further comprising an ion beam dump mounted on said rotary scan assembly and forming an annular beam dump region which rotates with said rotary scan assembly, wherein said analyzer magnet is operative to direct ions of said accelerated beam having an m/e greater than said desired m/e towards said annular beam dump region.
8. Ion implant apparatus as claimed in claim 1 , wherein said final beam path has a total ion drift distance which is less than a diameter of said periphery of said rotary scan assembly.
9. Ion implant apparatus as claimed in claim 8 , wherein said total drift distance is less than half of said diameter.
10. Ion implant apparatus as claimed in claim 1 , wherein said acceleration path is aligned with said axis of rotation of said rotary scan assembly.
11. A method of implanting ions into planar substrates mounted on substrate holders distributed around a periphery of a rotary scan assembly, in which said substrate holders hold said planar substrates at a common substrate tilt angle to define a total cone angle about an axis of rotation of said scan assembly which is less than 60°, the method comprising the steps of:
a) generating a source of ions including ions desired for implantation;
b) extracting and accelerating said ions from said source along a linear acceleration path to produce an accelerated ion beam having an energy of at least 500 keV;
c) bending said accelerated beam to direct an accelerated beam of said ions desired for implantation in a predetermined implant direction along a final beam path which is at an angle to said axis of rotation of at least 45°, and
d) rotating said rotary scan assembly such that said substrates successively intercept said beam path in a travel direction.
12. A method of implanting ions as claimed in claim 11 , further comprising the step of analyzing said accelerated beam using an analyzer magnet to provide an angular separation between ions of different mass/charge ratio (m/e).
13. A method of implanting ions as claimed in claim 12 , wherein said analyzer magnet directs ions having an m/e which is desired for implantation in said predetermined ion implant direction along said final beam path, and wherein said analyzer magnet directs ions having an m/e greater than said desired m/e towards an annular beam dump region of a beam dump.
14. A method of implanting ions as claimed in claim 11 , further comprising the step of deflecting said accelerated beam at a repetition rate through a range of deflection angles, to produce a scanned beam such that said final beam path is scanned transversely relative to said travel direction of said substrates.
15. A method of implanting ions as claimed in claim 14 , further including the steps of:
receiving said scanned beam over said range of deflection angles in an analyzer magnet; and
analyzing said scanned beam using said analyzer magnet to produce an angular separation between beam ions of different mass/charge ratios (m/e).
16. A method of implanting ions as claimed in claim 15 , wherein said analyzer magnet directs ions having an m/e which is desired for implantation in a collimated scanned beam in said predetermined ion implant direction along said final beam path.
17. A method of implanting ions as claimed in claim 16 , wherein said analyzer magnet directs ions having an m/e greater than said desired m/e towards an annular beam dump region of an ion beam dump mounted on said rotary scan assembly.
18. A method of implanting ions as claimed in claim 11 , wherein ions to be implanted drift along said final beam path over a total ion drift distance which is less than a diameter of said periphery of said rotary scan assembly.
19. A method of implanting ions as claimed in claim 18 , wherein said total ion drift distance is less than half of said diameter.
20. A method of implanting ions as claimed in claim 11 , wherein said linear acceleration path is aligned with said axis of rotation of said rotary scan assembly.