Electronic device with gate driver for high voltage level shifter

1. An electronic device comprising a level shifter for performing a voltage shift of a low level input signal of a first voltage domain to a high level output signal of a second voltage domain, the level shifter comprising:

a high-side transistor and a low-side transistor, the high-side transistor being coupled with a first side of its channel to the supply voltage level of the second voltage domain and with a second side of its channel to a first side of the low-side transistor so as to provide an output node between the channel of the high-side transistor and the channel of the low-side transistor for driving a load with the high level output signal of the second voltage domain;

the level shifter being configured to have a first state in which the high-side transistor is conducting and the low-side transistor is not conducting, a second state in which the low-side transistor is conducting and the high-side transistor is not conducting and a third state in which the high-side transistor is not conducting and the low-side transistor is not conducting;

a gate driving stage being coupled between the supply voltage level of the second supply voltage domain and a reference voltage and configured to receive control signals having voltage levels of the first voltage domain and to control a control gate of the low-side transistor; and

wherein the gate driving stage comprises a first control stage that is configured to bias in the third state the control gate of the low-side transistor in response to the voltage level at the output node for maintaining a first voltage difference between the output node and the control gate of the low-side transistor that is enough to keep the low-side transistor not conducting.

2. The electronic device of claim 1 , wherein the first voltage difference is about one threshold voltage level of a MOSFET transistor.

3. The electronic device of claim 1 , wherein, in the third state, the first control stage keeps the voltage level at the control gate of the low-side transistor well below the supply voltage level of the second domain.

4. The electronic device of claim 2 , wherein, in the third state, the first control stage keeps the voltage level at the control gate of the low-side transistor well below the supply voltage level of the second domain.

5. The electronic device of claim 3 , wherein, in the first state, the gate driving stage for the low-side transistor is configured to raise the voltage level at the control gate of the low-side transistor to the supply voltage level of the second domain.

6. The electronic device of claim 4 , wherein, in the first state, the gate driving stage for the low-side transistor is configured to raise the voltage level at the control gate of the low-side transistor to the supply voltage level of the second domain.

7. The electronic device of claim 3 , wherein, in the second state, the gate driving stage for the low-side transistor is further configured to maintain a second voltage difference between the output node and the control gate that is enough to keep the low-side transistor conducting.

8. The electronic device of claim 4 , wherein, in the second state, the gate driving stage for the low-side transistor is further configured to maintain a second voltage difference between the output node and the control gate that is enough to keep the low-side transistor conducting.

9. The electronic device of claim 5 , wherein, in the second state, the gate driving stage for the low-side transistor is further configured to maintain a second voltage difference between the output node and the control gate that is enough to keep the low-side transistor conducting.

10. The electronic device of claim 2 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

11. The electronic device of claim 3 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

12. The electronic device of claim 4 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side switch charges the output node.

13. The electronic device of claim 5 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

14. The electronic device of claim 6 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

15. The electronic device of claim 7 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

16. The electronic device of claim 8 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

17. The electronic device of claim 9 , wherein the first control stage comprises a current path between a supply voltage node of the second domain and the control gate of the low-side transistor for supplying current to the control gate of the low-side transistor, wherein, in the first state, the current path is configured to provide a current that is large enough to drive the control gate of the low-side transistor faster than the high-side transistor charges the output node.

18. The electronic device of claim 1 , wherein the output node is coupled to an LCD device.

19. The electronic device of claim 7 , wherein the output node is coupled to an LCD device.

20. The electronic device of claim 17 , wherein the output node is coupled to an LCD device.