IP Library Granted Patent US 8,692,111
Granted Patent B2
US 8,692,111 · App. 13/298,136 · Granted Apr 8, 2014

High throughput laser ablation processes and structures for forming contact holes in solar cells

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,692,111
App. No.
13/298,136
Granted
Apr 8, 2014
Kind
B2
Abstract

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.

Claims (34)

1. A process of fabricating a solar cell, the process comprising:

forming a plurality of strips of linear base diffusion regions, the plurality of strips of linear base diffusion regions being configured to collect majority charge carriers in the solar cell;

forming an interlayer dielectric over the plurality of linear base diffusion regions and over a plurality of emitter diffusion regions;

forming a laser blocking layer over the interlayer dielectric;

using a laser to form a plurality of contact holes through a single opening in the laser blocking layer and through the interlayer dielectric to expose a strip of linear base diffusion region in the plurality of strips of linear base diffusion regions; and

forming a metal contact over the strip of linear base diffusion region, the metal contact being electrically coupled to the strip of linear base diffusion region through contact holes in the plurality of contact holes.

2. The process of claim 1 further comprising forming another metal contact over an emitter diffusion region in the plurality of emitter diffusion regions, the other metal contact being electrically coupled to the emitter diffusion region.

3. The process of claim 2 wherein the interlayer dielectric comprises a stack of dielectric layers.

4. The process of claim 3 wherein the interlayer dielectric comprises silicon nitride.

5. The process of claim 1 wherein the laser blocking layer comprises polyimide.

6. The process of claim 1 wherein the single opening in the laser blocking layer is formed by wet etching.

7. The process of claim 1 wherein the metal contact has a width that is wider than a width of the strip of linear base diffusion region.

8. The process of claim 1 wherein the metal contact extends past an edge of the strip of linear base diffusion region and directly over an emitter diffusion region.

9. A solar cell fabricated according to the process of claim 1 .

10. A solar cell comprising:

a strip of linear base diffusion region;

an interlayer dielectric over the strip of linear base diffusion region;

a laser blocking layer over the interlayer dielectric;

a plurality of laser-drilled contact holes through a single opening in the laser blocking layer and through the interlayer dielectric, the plurality of laser-drilled contact holes exposing the strip of linear base diffusion region, each of the plurality of laser-drilled contact holes having a diameter of at most 40 microns; and

a metal contact electrically coupled to the strip of linear base diffusion region through the plurality of laser-drilled contact holes.

11. The solar cell of claim 10 further comprising:

a strip of linear emitter diffusion region;

another metal contact electrically coupled to the strip of linear emitter diffusion region, the other metal contact being electrically coupled to the strip of linear emitter diffusion region through the interlayer dielectric.

12. The solar cell of claim 11 wherein the metal contact is interdigitated with the other metal contact.

13. The solar cell of claim 11 wherein the strip of linear emitter diffusion region, the strip of linear base diffusion region, the metal contact, and the other metal contact are on a backside of the solar cell, the backside being opposite a front side of the solar cell facing the sun during normal operation.

14. A process for fabricating a solar cell, the process comprising:

forming a linear base diffusion region, the linear base diffusion region being configured to collect majority charge carriers in the solar cell;

forming an interlayer dielectric over the linear base diffusion region;

forming a laser blocking layer over the interlayer dielectric;

using a laser to form a plurality of laser-drilled contact holes through a single opening in the laser blocking layer and through the interlayer dielectric to expose the linear base diffusion region; and

forming a metal contact over the strip of linear base diffusion region, the metal contact being electrically coupled to the linear base diffusion region through laser-drilled contact holes in the plurality of laser-drilled contact holes.

15. The process of claim 14 further comprising forming another metal contact over an emitter diffusion region, the other metal contact being electrically coupled to the emitter diffusion region.

16. The process of claim 14 wherein the interlayer dielectric comprises a dielectric stack.

17. A solar cell fabricated according to the process of claim 14 .

Assignments (4)
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062490/0742 →