Arrays of long nanostructures in semiconductor materials and methods thereof
View Patent ↗An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm. All nanowires of the plurality of nanowires are substantially parallel to each other.
1. An array of nanowires, the array comprising:
a plurality of silicon nanowires, the plurality of silicon nanowires including a plurality of first ends and a plurality of second ends respectively;
wherein:
for each silicon nanowire of the plurality of silicon nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm; and
all silicon nanowires of the plurality of silicon nanowires are substantially parallel to each other,
wherein the plurality of silicon nanowires is a part of a thermoelectric device.
2. The array of nanowires of claim 1 wherein the distance is at least 300 μm.
3. The array of nanowires of claim 2 wherein the distance is at least 400 μm.
4. The array of nanowires of claim 3 wherein the distance is at least 500 μm.
5. The array of nanowires of claim 4 wherein the distance is at least 525 μm.
6. An array of nanostructures, the array comprising:
a plurality of silicon nanostructures, the plurality of silicon nanostructures including a plurality of first ends and a plurality of second ends respectively;
wherein:
for each silicon nanostructure of the plurality of silicon nanostructures, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm; and
all silicon nanostructures of the plurality of silicon nanostructures are substantially parallel to each other,
wherein the plurality of silicon nanostructures is a part of a thermoelectric device.
7. The array of nanostructures of claim 6 wherein the distance is at least 300 μm.
8. The array of nanostructures of claim 7 wherein the distance is at least 400 μm.
9. The array of nanostructures of claim 8 wherein the distance is at least 500 μm.
10. The array of nanostructures of claim 9 wherein the distance is at least 525 μm.
11. The array of nanostructures of claim 6 wherein the plurality of silicon nanostructures corresponds to a plurality of silicon nanoholes respectively.
12. An array of nanowires, the array comprising:
a plurality of silicon nanowires, each silicon nanowire of the plurality of silicon nanowires including a first end at a surface and a second end, the first end and the second end being separated by a first distance of at least 200 μm;
wherein:
the plurality of silicon nanowires corresponds to an area on the surface; and
all silicon nanowires of the plurality of silicon nanowires are substantially parallel to each other,
wherein the plurality of silicon nanowires is a part of a thermoelectric device.
13. The array of nanowires of claim 12 wherein the first distance is at least 300 μm.
14. The array of nanowires of claim 13 wherein the first distance is at least 400 μm.
15. The array of nanowires of claim 14 wherein the first distance is at least 500 μm.
16. The array of nanowires of claim 15 wherein the first distance is at least 525 μm.
17. The array of nanowires of claim 12 wherein the area is at least 100 mm 2 in size.
18. The array of nanowires of claim 17 wherein the area is at least 1000 mm 2 in size.
19. The array of nanowires of claim 18 wherein the area is at least 2500 mm 2 in size.
20. The array of nanowires of claim 19 wherein the area is at least 5000 mm 2 in size.
21. The array of nanowires of claim 12 wherein each silicon nanowire of the plurality of silicon nanowires is substantially perpendicular to the surface.
22. The array of nanowires of claim 12 wherein each silicon nanowire of the plurality of silicon nanowires corresponds to a cross-sectional area associated with a distance across, the distance across being less than 250 nm.
23. The array of nanowires of claim 22 wherein the cross-sectional area is substantially uniform along a longitudinal direction for each silicon nanowire of the plurality of silicon nanowires.
24. The array of nanowires of claim 12 wherein the plurality of silicon nanowires includes a first silicon nanowire and a second silicon nanowire, the first silicon nanowire and the second silicon nanowire being separated by a second distance, the second distance being less than 1000 nm.
25. The array of nanowires of claim 12 wherein each silicon nanowire of the plurality of silicon nanowires is separated from another silicon nanowire selected from the plurality of silicon nanowires by a second distance, the second distance being less than 1000 nm.
26. An array of nanostructures, the array comprising:
a plurality of silicon nanostructures, each silicon nanostructure of the plurality of silicon nanostructures including a first end at a surface and a second end, the first end and the second end being separated by a first distance of at least 200 μm;
wherein:
the plurality of silicon nanostructures corresponds to an area on the surface;
all silicon nanostructures of the plurality of silicon nanostructures are substantially parallel to each other,
wherein the plurality of silicon nanostructures is a part of a thermoelectric device.
27. The array of nanostructures of claim 26 wherein the first distance is at least 300 μm.
28. The array of nanostructures of claim 27 wherein the first distance is at least 400 μm.
29. The array of nanostructures of claim 28 wherein the first distance is at least 500 μm.
30. The array of nanostructures of claim 29 wherein the first distance is at least 525 μm.
31. The array of nanostructures of claim 26 wherein the area is at least 100 mm 2 in size.
32. The array of nanostructures of claim 31 wherein the area is at least 1000 mm 2 in size.
33. The array of nanostructures of claim 32 wherein the area is at least 2500 mm 2 in size.
34. The array of nanostructures of claim 33 wherein the area is at least 5000 mm 2 in size.
35. The array of nanostructures of claim 26 wherein each silicon nanosructure of the plurality of silicon nanostructures is substantially perpendicular to the surface.
36. The array of nanostructures of claim 26 wherein the plurality of silicon nanostructures corresponds to a plurality of silicon nanoholes respectively.
37. The array of nanostructures of claim 36 wherein each silicon nanohole of the plurality of silicon nanoholes corresponds to a cross-sectional area associated with a distance across, the distance across being less than 250 nm.
38. The array of nanostructures of claim 37 wherein the cross-sectional area is substantially uniform along a longitudinal direction for each silicon nanohole of the plurality of silicon nanoholes.
39. The array of nanostructures of claim 26 wherein the plurality of silicon nanostructures includes a first silicon nanostructure and a second silicon nanostructure, the first silicon nanostructure and the second silicon nanostructure being separated by a second distance, the second distance being less than 1000 nm.
40. The array of nanostructures of claim 26 wherein each silicon nanostructure of the plurality of silicon nanostructures is separated from another silicon nanostructure selected from the plurality of silicon nanostructures by a second distance, the second distance being less than 1000 nm.