Imaging apparatus and methods
View Patent ↗Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques.
1. An apparatus comprising:
a plurality of pixels each configured to detect radiation incident thereon, the plurality of pixels configured to detect at least two different wavelength ranges of a short wavelength infrared spectrum, the plurality of pixels comprising:
a first pixel configured to detect a first range of wavelengths in the short wavelength infrared (SWIR) spectrum and produce a first photoresponse indicative of a quantity of radiation in the first range incident thereon; and
a second pixel configured to detect a second range of wavelengths in the SWIR spectrum and produce a second photoresponse indicative of a quantity of radiation in the second range incident thereon, the second range differing from the first range; and
readout circuitry configured to read out the first and second photoresponses,
wherein the first pixel comprises a first photodetector and the second pixel comprises a second photodetector, and
wherein each of the first and second photodetectors is capable of detecting a third range of wavelengths in the SWIR spectrum, the third range of wavelengths comprising the first range and the second range.
2. The apparatus of claim 1 , wherein the apparatus further comprises a silicon substrate in or on which the plurality of pixels and the readout circuitry are formed, wherein the first photodetector and the second photodetector are monolithically integrated with the silicon substrate.
3. The apparatus of claim 2 , wherein the first photodetector comprises germanium and the second photodetector comprises germanium.
4. The apparatus of claim 3 , wherein the first pixel comprises a first filter configured to pass the first range of wavelengths, and wherein the second pixel comprises a second filter configured to pass the second range of wavelengths.
5. The apparatus of claim 4 , wherein the first filter is an absorption filter configured to absorb at least some radiation in the third range that is not in the first range, and wherein the second filter is an absorption filter configured to absorb at least some radiation in the third range that is not in the second range.
6. The apparatus of claim 2 , further comprising a processor coupled to the readout circuitry to produce an image from signals provided by the readout circuitry.
7. A semiconductor structure, comprising:
a substrate;
a photodetector comprising at least one semiconductor material, the photodetector formed on or at least partially in the substrate; and
a semiconductor layer configured as a filter to block at least some radiation having a wavelength greater than 700 nanometers incident on the semiconductor structure from reaching the photodetector and doped to be electrically conducting.
8. The semiconductor structure of claim 7 , wherein the semiconductor layer has a doping concentration of at least 0.1×10 19 dopants per cubic centimeter.
9. The semiconductor structure of claim 7 , wherein the semiconductor layer contacts the photodetector.
10. The semiconductor structure of claim 7 , wherein the semiconductor structure further comprises a dielectric material disposed between the photodetector and the semiconductor layer to prevent direct electrical contact between the semiconductor layer and the photodetector.