Semiconductor device having a laser annealed semiconductor layer
View Patent ↗A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 20 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
1. A semiconductor device comprising:
a laser-annealed semiconductor layer comprising a first polycrystalline silicon layer, and a second polycrystalline silicon layer integrally formed on the first polycrystalline silicon layer and doped with nitrogen,
the laser-annealed semiconductor layer comprising a first area laser-annealed and a second area laser-annealed wherein a part of the first area overlaps with a part of the second area in a direction perpendicular to a surface of the laser-annealed semiconductor layer and the overlap region is laser-annealed by two times, the laser-annealed semiconductor layer having a nitrogen concentration of at least 3×10 20 atoms/cc on the second polycrystalline silicon layer and a root mean square (rms) value of grain protrusion height is less than 20nm.
2. The semiconductor device of claim 1 , wherein the nitrogen concentration is in the range of 5×10 20 to 3×10 22 atoms/cc.
3. The semiconductor device of claim 2 , wherein the nitrogen concentration is in the range of 5×10 20 to 5×10 21 atoms/cc.
4. The semiconductor device of claim 1 , wherein the semiconductor layer has an oxygen concentration in the range of 3×10 21 to 7×10 22 atoms/cc at the surface thereof.
5. The semiconductor device of claim 4 , wherein the oxygen concentration is in the range of 5×10 21 to 5×10 22 atoms/cc.
6. The semiconductor device of claim 1 , wherein the semiconductor device is one of a plurality of semiconductor devices formed in a display region of a display device.
7. A semiconductor device comprising:
a laser-annealed semiconductor layer comprising a first polycrystalline silicon layer, and a second polycrystalline silicon layer integrally formed on the first polycrystalline silicon layer and doped with nitrogen, the laser-annealed semiconductor layer comprising a first area laser-annealed and a second area laser-annealed wherein a part of the first area overlaps with a part of the second area in a direction perpendicular to a surface of the laser-annealed semiconductor layer and the overlap region is laser-annealed by two times, the laser-annealed semiconductor layer having a first surface formed of the second polycrystalline silicon layer and second surface formed of the first polycrystalline silicon layer, and being disposed on a substrate such that the second surface is adjacent to the substrate;
a gate electrode disposed over the laser-annealed semiconductor layer and adjacent to the first surface;
a gate insulating layer separating the gate electrode and the first surface; and
source and drain electrodes connected to the laser-annealed semiconductor layer;
wherein a nitrogen concentration at the first surface of the laser-annealed semiconductor layer is at least 3×10 20 atoms/cc and a root mean square (rms) value of grain protrusion height is less than 20nm.
8. A semiconductor device comprising:
a laser-annealed semiconductor layer comprising a first polycrystalline silicon layer, and a second polycrystalline silicon layer integrally formed on the first polycrystalline silicon layer and doped with nitrogen,
the laser-annealed semiconductor layer comprising a first area laser-annealed and a second area laser-annealed wherein a part of the first area overlaps with a part of the second area in a direction perpendicular to a surface of the laser-annealed semiconductor layer and the overlap region is laser-annealed by two times,
wherein a grain protrusion across the overlap region is higher than a grain protrusion in regions other than the overlap region, and the laser-annealed semiconductor layer has a nitrogen concentration of at least 3×10 20 atoms/cc on the second polycrystalline silicon layer and a root mean square (rms) value of grain protrusion height is less than 20nm.
9. The semiconductor device of claim 8 , wherein the nitrogen concentration is in the range of 5×10 20 to 3×10 22 atoms/cc.
10. The semiconductor device of claim 9 , wherein the nitrogen concentration is in the range of 5×10 20 to 5×10 21 atoms/cc.
11. The semiconductor device of claim 8 , wherein the semiconductor layer has an oxygen concentration in the range of 3×10 21 to 7×10 22 atoms/cc at the surface thereof.
12. The semiconductor device of claim 11 , wherein the oxygen concentration is in the range of 5×10 21 to 5×10 22 atoms/cc.
13. The semiconductor device of claim 8 , wherein the semiconductor device is one of a plurality of semiconductor devices formed in a display region of a display device.