Thin-film transistor forming substrate, semiconductor device, and electric apparatus
View Patent ↗There is provided a thin-film transistor forming substrate in which at least one of a source electrode, a drain electrode, and a gate electrode, which are constituent elements of a thin film transistor, or a first electrode is included on a face of a substrate main body that is located on any one side in a thickness direction. An embedded wiring that is connected to one of the source electrode, the drain electrode, the gate electrode, and the first electrode is buried inside the substrate main body.
1. A thin-film transistor forming substrate in which at least one of a source electrode, a drain electrode, and a gate electrode, which are constituent elements of a thin film transistor, or a first electrode is included on a face of a substrate main body that is located on any one side in a thickness direction,
wherein an embedded wiring that is connected to one of the source electrode, the drain electrode, the gate electrode, and the first electrode is buried inside the substrate main body,
wherein, the thin film transistor includes a semiconductor layer, and in the thin film transistor, at least parts of the semiconductor layer, the source electrode, and the drain electrode are pinched by one pair of the gate electrodes so as to form a double gate structure.
2. The thin-film transistor forming substrate according to claim 1 , wherein the embedded wiring is one of a scanning line, a data line, a holding capacitor line, a holding capacitor, a signal line, and a power supply line.
3. The thin-film transistor forming substrate according to claim 2 , wherein a line width of the embedded wiring is set to a size smaller than a size of a thickness of an insulating member arranged between the embedded wirings.
4. The thin-film transistor forming substrate according to claim 1 ,
wherein the substrate main body is formed by laminating a plurality of base members, and
wherein the embedded wiring is buried inside one of the plurality of base members, or a plurality of the embedded wirings is buried in the base members that are different from each other.
5. The thin-film transistor forming substrate according to claim 1 , wherein the substrate main body has flexibility or stretchability.
6. The thin-film transistor forming substrate according to claim 1 , wherein an electronic component is buried inside the substrate main body.
7. The thin-film transistor forming substrate according to claim 1 , wherein an arrangement space of a plurality of the electronic components is equal to or greater than a length of one side of the electronic component and is preferably equal to or greater than three times a length of the one side.
8. The thin-film transistor forming substrate according to claim 1 , wherein the electronic component is configured so as to include at least one or more types of an IC, a capacitor, a resistor, and an inductor.
9. The thin-film transistor forming substrate according to claim 1 , wherein at least a part of one of the source electrode, the drain electrode, and the gate electrode or the first electrode is buried inside the substrate main body so as to be connected to the embedded wiring.
10. A semiconductor device comprising:
a substrate that is formed from the thin-film transistor forming substrate according to claim 1 ;
the thin film transistor that includes the semiconductor layer, the gate electrode, the drain electrode, and the source electrode that are configured so as to include a part of the constituent elements of the thin film transistor formed on the substrate;
the first electrode that is connected to the drain electrode; and
the embedded wiring that is embedded inside the substrate and connected to the thin film transistor.
11. The semiconductor device according to claim 10 , wherein the source electrode, the drain electrode, and the first electrode are formed in a same layer.