Heat stable SnAl and SnMg based dielectrics
View Patent ↗A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
1. A method for making an article comprising:
providing a transparent substrate; and
depositing a film over the substrate, the film comprising tin oxide doped with a third element,
wherein the third element is either aluminum or magnesium,
wherein the third element comprises more than 15% by weight of the total metal content of the film,
wherein the film is a transparent dielectric film, and
wherein the film has an appearance that remains the same, by visual inspection, after a heat treatment.
2. A method as in claim 1 , wherein the substrate comprises glass.
3. A method as in claim 1 , further comprising at least one of
depositing an antireflective film over the substrate;
depositing a metallic reflective film over the substrate; or
depositing a protective film over the substrate.
4. A method as in claim 1 , further comprising:
heat treating the article.
5. A method as in claim 4 , wherein the heat treating process comprises annealing at
a temperature less than 1000 C for less than 10 minutes.
6. A method as in claim 4 , wherein the heat treating process comprises annealing at a temperature higher than 500 C for less than 10 minutes.
7. A method for making an article comprising:
providing a transparent substrate;
depositing a film over the substrate, the film comprising tin oxide doped with a third element,
wherein the third element is either aluminum or magnesium,
wherein the third element comprises more than 15% by weight of the total metal content of the film,
wherein the film is a transparent dielectric film, and
wherein the film has a first optical appearance; and
heat treating the film at a temperature higher than 500 C,
wherein the heat treated film has a second optical appearance,
wherein the first and second appearance are the same by visual inspection.
8. A method as in claim 7 , wherein the substrate comprises glass.
9. A method as in claim 7 , further comprising at least one of
depositing an antireflective film over the substrate;
depositing a metallic reflective film over the substrate; or
depositing a protective film over the substrate.
10. A method as in claim 7 , wherein the heat treating process comprises annealing at a temperature less than 1000 C.
11. A method for making an article comprising:
providing a transparent substrate; and
depositing a film over the substrate, the film comprising tin oxide doped with magnesium,
wherein magnesium comprises more than 15% by weight of the total metal content of the film, and
wherein the film is a transparent dielectric film.
12. A method as in claim 11 , wherein the substrate comprises glass.
13. A method as in claim 11 , further comprising at least one of
depositing an antireflective film over the substrate;
depositing a metallic reflective film over the substrate; or
depositing a protective film over the substrate.
14. A method as in claim 11 , further comprising:
heat treating the article.
15. A method as in claim 14 , wherein the heat treating process comprises
annealing at a temperature less than 1000 C for less than 10 minutes.
16. A method as in claim 14 , wherein the heat treating process comprises
annealing at a temperature higher than 500 C for less than 10 minutes.