MIXED TARGETS FOR FORMING A CADMIUM DOPED TIN OXIDE BUFFER LAYER IN A THIN FILM PHOTOVOLTAIC DEVICES
Ceramic sputtering targets and mixed metal targets are generally provided for forming a resistive transparent buffer layer. The ceramic sputtering target can include tin, oxygen, and cadmium (and optionally zinc) in relative amounts such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. For example, the ceramic sputtering target can include tin oxide and cadmium oxide (and optionally zinc oxide) in relative amounts such that cadmium (and optional zinc) is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium (and optional zinc). The mixed metal sputtering target can include tin and cadmium such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. The mixed metal sputtering target can further include zinc.
1 . A ceramic sputtering target for forming a resistive transparent buffer layer, the ceramic sputtering target comprising: tin, oxygen, and cadmium in relative amounts such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium, wherein the sputtering target includes oxygen, wherein oxygen is included in a total amount that is within about +/−10% of an atomic amount of oxygen required to form a 1:2 atomic ratio of tin to oxygen and a 1:1 atomic ratio of oxygen to cadmium.
2 . The ceramic sputtering target as in claim 1 , wherein oxygen is included in a total amount that is within about +/−5% of the atomic amount of oxygen required to form a 1:2 atomic ratio of tin to oxygen and a 1:1 atomic ratio of oxygen to cadmium.
3 . The ceramic sputtering target as in claim 1 , wherein cadmium is included in an atomic amount that is about 0.5 atomic % to about 25 atomic % of a total atomic amount of tin and cadmium.
4 . The ceramic sputtering target as in claim 1 , wherein cadmium is included in an atomic amount that is about 1% to about 10% of a total atomic amount of tin and cadmium.
5 . The ceramic sputtering target as in claim 1 , further comprising zinc.
6 . The ceramic sputtering target as in claim 5 , wherein zinc is included in an amount of about 0.1 atomic % to about 3 atomic %.
7 . The ceramic sputtering target as in claim 5 , wherein cadmium and zinc are included in a combined atomic amount that is less than 33% of a total atomic amount of tin, zinc, and cadmium.
8 . The ceramic sputtering target as in claim 5 , wherein cadmium and zinc are included in a combined atomic amount that is about 1% to about 10% of a total atomic amount of tin, zinc, and cadmium.
9 . The ceramic sputtering target as in claim 5 , wherein oxygen is included in a total amount that is within about +/−10% of the atomic amount of oxygen required to form a 1:2 atomic ratio of tin to oxygen and a 1:1 atomic ratio of oxygen to cadmium and zinc.
10 . A ceramic sputtering target for forming a resistive transparent buffer layer, the ceramic sputtering target comprising:
tin oxide and cadmium oxide in relative amounts such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium.
11 . The ceramic sputtering target as in claim 10 , wherein the ceramic sputtering target is substantially free of cadmium stannate.
12 . The ceramic sputtering target as in claim 10 , further comprising zinc oxide.
13 . The ceramic sputtering target as in claim 12 , wherein zinc is included in an amount of about 0.1 atomic % to about 3 atomic % of a total atomic amount of cadmium, tin, and zinc.
14 . The ceramic sputtering target as in claim 12 , wherein cadmium and zinc are included in a combined atomic amount that is less than 33% of a total atomic amount of tin, zinc, and cadmium.
15 . The ceramic sputtering target as in claim 12 , wherein cadmium and zinc are included in a combined atomic amount that is about 1% to about 10% of a total atomic amount of tin, zinc, and cadmium.
16 . The ceramic sputtering target as in claim 12 , wherein oxygen is included in a total amount that is within about +/−10% of the atomic amount of oxygen required to form a 1 : 2 atomic ratio of tin to oxygen and a 1:1 atomic ratio of oxygen to cadmium and zinc.
17 . A mixed metal sputtering target for forming a resistive transparent buffer layer, the mixed metal sputtering target comprising: tin and cadmium such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium.
18 . The mixed metal sputtering target as in claim 17 , further comprising zinc such that cadmium and zinc are included in an atomic amount that is less than 33% of a total atomic amount of tin, zinc, and cadmium.
19 . The mixed metal sputtering target as in claim 18 , wherein zinc is included in an amount of about 0.1 atomic % to about 3 atomic % of the total atomic amount of tin, zinc, and cadmium.
20 . The mixed metal sputtering target as in claim 17 , wherein the mixed metal sputtering target is substantially free from oxygen.