Semiconductor device and a method of manufacturing the same
View Patent ↗In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
1. A semiconductor device comprising:
(a) a semiconductor device;
(b) a first capacitor element formed over the semiconductor substrate; and
(c) a second capacitor element formed over the first capacitor element,
the first capacitor element including:
(b1) a first electrode comprising the semiconductor substrate;
(b2) a first capacitor insulating film formed over the first electrode; and
(b3) a second electrode formed over the first capacitor insulating film,
the second capacitor element including:
(c1) the second electrode;
(c2) a second capacitor insulating film formed over the second electrode; and
(c3) a third electrode formed over the second capacitor insulating film,
wherein the length of the third electrode in a first direction is larger than that of the second electrode in the first direction, the length of the third electrode in a second direction intersecting the first direction is smaller than the length of the second electrode in the second direction,
wherein the first capacitor element is formed in a region where the semiconductor substrate and the second electrode overlap each other planarly, the second capacitor element is formed in a region where he second electrode and the third electrode overlap each other planarly,
wherein over a surface of the third electrode, there exist a region where a metal silicide film is formed, and a region where the metal silicide film is not formed, and
wherein the metal silicide film-formed region comprises a region spaced apart from an end region of the third electrode in the second direction and a region spaced apart from a stepped region of the third electrode in the first direction.
2. A semiconductor device according to claim 1 , wherein over a surface of the second electrode there exist a region where the metal silicide film is formed and a region where the metal silicide film is not formed, the metal silicide-formed region being a region spaced apart from a boundary region between the third electrode and the second electrode in the second direction.
3. A semiconductor device according to claim 2 ,
wherein a first plug coupled electrically to the third electrode is formed in a region of the third electrode where the third electrode does not overlap the second electrode planarly,
wherein a second plug coupled electrically to the second electrode is formed in a region of the second electrode where the second electrode does not overlap the third electrode planarly, and
wherein a third plug coupled electrically to the first electrode is formed over the semiconductor substrate.
4. A semiconductor device according to claim 3 , wherein the first capacitor element and the second capacitor element are coupled in parallel with each other.