Light emitting diode and method for manufacture of the same

1. A semiconductor light emitting device comprising:

a substrate comprising a top surface and a bottom surface;

a light emitting structure on the substrate, disposing closer to the substrate top surface than the substrate bottom surface, and comprising an n-type conductive type semiconductor layer, a p-type conductive type semiconductor layer on the n-type conductive type semiconductor layer, and an active layer between the n-type and p-type conductive type semiconductor layers;

a transparent electrode layer on the p-type conductive type semiconductor layer;

a first electrode disposed on the n-type conductive type semiconductor layer; and

a second electrode disposed on and contacting to the transparent electrode layer,

wherein the substrate has side surfaces extending from the substrate bottom surface to the substrate top surface, the side surfaces inclined outwardly as the substrate extends in a direction from the substrate bottom surface to the substrate top surface,

wherein the transparent electrode layer covers more than 50% of a total area of a top surface of the p-type conductive type semiconductor layer, and

wherein a part of light generated by the light emitting structure is emitted to outside via the transparent electrode layer.

2. The semiconductor light emitting device in claim 1 , wherein a width of the substrate top surface is greater than a width of the substrate bottom surface, and

wherein a portion of the substrate top surface extends beyond the substrate bottom surface.

3. The semiconductor light emitting device in claim 1 , further comprising a buffer layer between the substrate and the n-type conductive type semiconductor layer.

4. The semiconductor light emitting device in claim 1 , wherein the active layer comprises at least one of single-quantum well and a multi-quantum well structure comprising of InGaN/GaN.

5. The semiconductor light emitting device in claim 1 , wherein the n-type conductive type semiconductor layer comprises a GaN layer.

6. The semiconductor light emitting device in claim 3 , wherein the buffer layer comprises at least one stacked structure of AlInN/GaN, In x Ga 1-x N/GaN, or Al x In y Ga 1-x-y N/In x Ga 1-x N/GaN.

7. The semiconductor light emitting device in claim 1 , the transparent electrode layer comprises at least one of ITO, ZnO, RuOx, TiOx, or IrOx.

8. The semiconductor light emitting device in claim 1 , wherein the first electrode comprises titanium (Ti).

9. The semiconductor light emitting device in claim 1 , wherein the second electrode comprises metallic material.

10. A semiconductor light emitting device, comprising:

a substrate;

a semiconductor layer on the substrate, the semiconductor layer comprising a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a transparent electrode layer including ITO on the second semiconductor layer;

a first electrode disposed on the first semiconductor layer; and

a second electrode disposed on and contacting to the transparent electrode layer,

wherein the substrate has at least one side surface having a predetermined tilt angle, wherein the predetermined tilt angle is an obtuse angle with respect to a bottom surface of the substrate,

wherein a part of the side surface of the substrate has a step part, and

wherein the step part extends outwardly as the substrate extends in a direction from the bottom surface of the substrate to a top surface of the substrate.

11. The semiconductor light emitting device in claim 10 , wherein the active layer comprises at least one of single-quantum well and a multi-quantum well structure comprising of InGaN/GaN.

12. The semiconductor light emitting device in claim 10 , wherein the first electrode comprises titanium (Ti).

13. The semiconductor light emitting device in claim 10 , wherein the first conductive type semiconductor layer comprises a GaN layer.

14. The semiconductor light emitting device in claim 1 , wherein the second electrode comprises nickel (Ni).

15. The semiconductor light emitting device in claim 1 , wherein the side surfaces include a tilt angle and a step part having an angle different from the tilt angle.

16. The semiconductor light emitting device in claim 15 , wherein a length from the step part to the top surface is less than a length from the step part to the bottom surface of the substrate.

17. The semiconductor light emitting device in claim 1 , wherein the substrate includes a break portion between the top surface and the bottom surface of the substrate.

18. The semiconductor light emitting device in claim 1 , wherein a length of the p-type conductive type semiconductor layer is less than a length of the bottom surface of the substrate.

19. The semiconductor light emitting device in claim 10 , wherein the second electrode comprises nickel (Ni).

20. A semiconductor light emitting device comprising:

a substrate comprising a top surface and an bottom surface;

a light emitting structure on the substrate, disposing closer to the top surface than the bottom surface, and comprising an n-type conductive type semiconductor layer, a p-type conductive type semiconductor layer on the n-type conductive type semiconductor layer, and an active layer between the n-type and p-type conductive type semiconductor layers;

a transparent electrode layer on the p-type conductive type semiconductor layer;

a first electrode disposed on the n-type conductive type semiconductor layer; and

a second electrode disposed on and contacting to the transparent electrode layer,

wherein a diagonal line from one corner to another corner of the top surface of the substrate is longer than a diagonal line from one corner to another corner of the bottom surface of the substrate,

wherein the substrate comprises a first side surface and a second side surface, the first side surface and the second side surface having inclined surfaces,

wherein a part of at least one of the first side surface or the second side surface of the substrate has a step part, and

wherein the transparent electrode layer covers more than 50% of a total area of top surface of the p-type conductive type semiconductor layer.