IP Library Granted Patent US 8,618,825
Granted Patent B2
US 8,618,825 · App. 13/308,758 · Granted Dec 31, 2013

Array substrate, manufacturing method and detecting method thereof, and liquid crystal panel

Inventor: Wei Qin (Beijing, CN)
Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
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Quick Facts
Patent No.
US 8,618,825
App. No.
13/308,758
Granted
Dec 31, 2013
Kind
B2
Abstract

An embodiment of the present disclosure provides a method of manufacturing an array substrate, comprising at least a step of forming a TFT pattern in a pixel region and correspondingly forming a TFT testing pattern in a testing region, wherein before forming a passivation layer to cover the pixel region and the testing region, a step of removing a gate insulation layer thin film above a testing line lead in the TFT testing pattern.

Claims (9)

1. A detecting method of an array substrate, comprising detecting the electrical characteristic of the TFT testing pattern after forming a TFT testing channel and removing a gate insulation layer thin film on a data line lead in the TFT testing pattern of the testing region,

wherein, detecting the electrical characteristic of the TFT testing pattern comprises:

making a testing probe into contact with the data line lead;

changing the input voltage of the data line lead to obtain the current change information between the source and drain electrodes of the testing region;

determining the electrical characteristic of the TFT testing pattern according to the current change information.

2. A detecting method of an array substrate, comprising detecting an electrical characteristic of a TFT testing pattern after forming a TFT testing channel and removing a gate insulation layer thin film on a testing line lead in the TFT testing pattern of a testing region, wherein, detecting the electrical characteristic of the TFT testing pattern comprises:

making a testing probe into contact with a gate line lead;

changing the input voltage of the gate line lead to obtain the current change information between the source and drain electrodes of the testing region;

determining the electrical characteristic of the TFT testing pattern according to the current change information.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2015
From: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD
To: BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO. LTD
Reel/Frame 036644/0601 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2011
From: QIN, WEI
To: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 027314/0508 →
Priority Claims (1)
CN 2010 1 0579427 · Dec 3, 2010 · national
Continuity (1)
Related Publication 20120138926A1 · Jun 7, 2012