Organic semiconductor compositions including plasticizers
A method includes combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel. The channel may comprise at least about 50% by weight of the plasticizer molecules.
1. A method, comprising:
combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel comprising at least about 50% by weight of the plasticizer molecules, wherein the plasticizer molecules are a solid at about 25° C. and about 100 kPa.
2. The method of claim 1 , further comprising forming a plurality of electrodes over the substrate, the electrodes being located to function as a gate electrode, a drain electrode, and a source electrode of an FET.
3. The method of claim 1 , wherein the combining includes dissolving the organic semiconductor molecules and plasticizer molecules in a mutual solvent.
4. The method of claim 3 , wherein the mutual solvent has a dipole moment of at least about 5E-30 C-m.
5. The method of claim 3 , further comprising forming a solution having a weight fraction of organic semiconductor molecules to plasticizer molecules ranging from about 5% to about 110%.
6. The method of claim 1 , wherein the channel is formed by jet-spraying.
7. The method of claim 1 , wherein the plasticizer comprises a phthalate ester.
8. The method of claim 1 , wherein said channel includes a solid solution of said organic semiconductor molecules and said plasticizer molecules.
9. A method, comprising:
combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel, wherein said plasticizer molecules are a solid at about 25° C. and about 100 kPa.
10. The method of claim 9 , further comprising forming a plurality of electrodes over the substrate, the electrodes being located to function as a gate electrode, a drain electrode, and a source electrode of an FET.
11. The method of claim 9 , wherein the channel comprises at least about 50% by weight plasticizer molecules.
12. The method of claim 9 , wherein the organic semiconductor molecules comprise a monodisperse compound.
13. The method of claim 9 , wherein the plasticizer molecule comprises at least one pendant group, the at least one pendant group comprising a cyclic moiety.
14. The method of claim 9 , wherein the plasticizer comprises a phthalate ester.
15. The method of claim 9 , wherein said channel includes a solid solution of said organic semiconductor molecules and said plasticizer molecules.
16. A method, comprising: combining organic semiconductor molecules and plasticizer molecules in a solution having a weight fraction of organic semiconductor molecules to plasticizer molecules ranging from about 5% to about 110% and the plasticizer molecules include a phthalate ester; and forming from said solution a solid organic semiconductor channel over a substrate, wherein the plasticizer molecules are a solid at about 25 C and about 100 kpa.
17. A method, comprising:
combining organic semiconductor molecules and plasticizer molecules in a solution having a weight fraction of organic semiconductor molecules to plasticizer molecules ranging from about 5% to about 110% and the plasticizer molecules include a phthalate ester; and
forming from said solution a solid organic semiconductor channel over a substrate, wherein the phthalate ester includes a pendant group covalently bonded to at least one oxygen atom of the phthalate ester, the pendant group having a cyclic moiety.
18. The method of claim 17 , further comprising forming plurality of electrodes over the substrate, the electrodes being located to function as a gate electrode, a drain electrode, and a source electrode of an FET.
19. The method of claim 17 , wherein the phthalate ester includes an isophthalate.
20. A method, comprising:
combining organic semiconductor molecules and plasticizer molecules in a solution having a weight fraction of organic semiconductor molecules to plasticizer molecules ranging from about 5% to about 110% and the plasticizer molecules include a phthalate ester; and
forming from said solution a solid organic semiconductor channel over a substrate, wherein said plasticizer molecules are a solid at about 25° C. and about 100 kPa.
21. The method of claim 20 , further comprising forming plurality of electrodes over the substrate, the electrodes being located to function as a gate electrode, a drain electrode, and a source electrode of an FET.