Solid-state imaging element, driving method, and electronic apparatus
View Patent ↗Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
1. A solid-state imaging element comprising:
a plurality of unit pixels, each having (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, and (iii) a draining part configured to drain a charge in the predetermined region;
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part; and
a voltage controller configured to control a voltage applied to the light shielding film,
wherein,
the voltage controller is configured to set (i) the voltage applied to the light shielding film to a first voltage in charge draining by the draining part, and (ii) the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
2. The solid-state imaging element according to claim 1 , wherein
charge draining by the draining part, charge transfer by the transfer part, and voltage control of the light shielding film by the voltage controller are performed collectively for a plurality of rows in a pixel array part in which the plurality of unit pixels are arranged.
3. The solid-state imaging element according to claim 1 , wherein
the first voltage is a negative voltage.
4. The solid-state imaging element according to claim 1 , wherein
the light shielding film is so formed as to be separated in units of one row or a plurality of rows in a pixel array part in which the plurality of unit pixels are arranged.
5. The solid-state imaging element according to claim 4 , wherein
the light shielding film is so formed as to be separated in such a manner that an aperture for the light receiving part is made as part of a boundary of the separation in units of one row or the plurality of rows.
6. The solid-state imaging element according to claim 4 , wherein
a drive circuit for the transfer part is used also as a drive circuit that applies a voltage to the light shielding film that is so formed as to be separated in units of one row or the plurality of rows.
7. The solid-state imaging element according to claim 1 , wherein
the predetermined region is a floating diffusion, and
the transfer part transfers a charge from the photoelectric conversion part to the floating diffusion.
8. The solid-state imaging element according to claim 1 , wherein
the predetermined region is a floating diffusion, and
the transfer part transfers a charge from a charge retaining part provided separately from the floating diffusion to the floating diffusion.
9. A driving method of a solid-state imaging element including
a plurality of unit pixels, each including (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, and (iii) a draining part configured to drain a charge in the predetermined region,
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part, and
a voltage controller configured to control a voltage applied to the light shielding film,
the driving method comprising:
setting the voltage applied to the light shielding film to a first voltage in charge draining by the draining part; and
setting the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
10. An electronic apparatus comprising:
a solid-state imaging element including
a plurality of unit pixels, each having (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, and (iii) a draining part configured to drain a charge in the predetermined region,
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part, and
a voltage controller configured to control a voltage applied to the light shielding film,
wherein,
the voltage controller is configured to set (i) the voltage applied to the light shielding film to a first voltage in charge draining by the draining part, and (ii) the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
11. A solid-state imaging element comprising:
a plurality of unit pixels, each having (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, (iii) a reading part configured to read out a charge transferred to the predetermined region, and (iv) a draining part configured to drain a charge in the predetermined region;
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part; and
a voltage controller configured to control a voltage applied to the light shielding film,
wherein,
the voltage controller is configured to set (i) the voltage applied to the light shielding film to a first voltage in a period from charge draining by the draining part to charge transfer by the transfer part, (ii) the voltage applied to the light shielding film to a second voltage lower than the first voltage in a period to charge reading by the reading part after charge transfer, and (iii) the voltage applied to the light shielding film to the first voltage in charge reading by the reading part.
12. The solid-state imaging element according to claim 11 , wherein
charge draining by the draining part, charge transfer by the transfer part, and voltage control of the light shielding film by the voltage controller in a period from charge draining to charge reading are performed collectively for a plurality of rows in a pixel array part in which the plurality of unit pixels are arranged.
13. The solid-state imaging element according to claim 11 , wherein the second voltage is a negative voltage.
14. The solid-state imaging element according to claim 11 , wherein
the light shielding film is so formed as to be separated in units of one row or a plurality of rows in a pixel array part in which the plurality of unit pixels are arranged.
15. The solid-state imaging element according to claim 14 , wherein
the light shielding film is so formed as to be separated in such a manner that an aperture for the light receiving part is made as part of a boundary of the separation in units of one row or the plurality of rows.
16. The solid-state imaging element according to claim 14 , further comprising:
a selecting part configured to select a pixel for which charge reading by the reading part is to be performed,
wherein a drive circuit for the selecting part is used also as a drive circuit that applies a voltage to the light shielding film that is so formed as to be separated in units of one row or the plurality of rows.
17. The solid-state imaging element according to claim 11 , wherein
the predetermined region is a floating diffusion, and
the transfer part transfers a charge from the photoelectric conversion part to the floating diffusion.
18. The solid-state imaging element according to claim 11 , wherein
the predetermined region is a floating diffusion, and
the transfer part transfers a charge from a charge retaining part provided separately from the floating diffusion to the floating diffusion.
19. A driving method of a solid-state imaging element including
a plurality of unit pixels, each including (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, (iii) a reading part configured to read out a charge transferred to the predetermined region, and (iv) a draining part configured to drain a charge in the predetermined region,
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part, and
a voltage controller configured to control a voltage applied to the light shielding film,
the driving method comprising:
setting the voltage applied to the light shielding film to a first voltage in a period from charge draining by the draining part to charge transfer by the transfer part;
setting the voltage applied to the light shielding film to a second voltage lower than the first voltage in a period to charge reading by the reading part after charge transfer; and
setting the voltage applied to the light shielding film to the first voltage in charge reading by the reading part.
20. An electronic apparatus comprising:
a solid-state imaging element including
a plurality of unit pixels, each having (i) a photoelectric conversion part, (ii) a transfer part configured to transfer a charge generated by the photoelectric conversion part to a predetermined region, (iii) a reading part configured to read out a charge transferred to the predetermined region, and (iv) a draining part configured to drain a charge in the predetermined region,
a light shielding film (i) formed entirely under an interconnect layer in the unit pixels, and (ii) configured to substantially shield the plurality of unit pixels from light except a light receiving part of the photoelectric conversion part, and
a voltage controller configured to control a voltage applied to the light shielding film,
wherein
the voltage controller is configured to set (i) the voltage applied to the light shielding film to a first voltage in a period from charge draining by the draining part to charge transfer by the transfer part, (ii) the voltage applied to the light shielding film to a second voltage lower than the first voltage in a period to charge reading by the reading part after charge transfer, and (iii) the voltage applied to the light shielding film to the first voltage in charge reading by the reading part.