Detection device comprising a rugged test with dual transistor

1. A detection device comprising:

a photodetector provided with first and second terminals,

a readout circuit provided with an input connected to the first terminal of the photodetector,

a bias circuit imposing a bias on the terminals of the photodetector,

a test circuit delivering a test current to the readout circuit,

a first transistor and a second transistor of opposite types connected in series through which the test current flows, the first transistor is separated from the readout circuit by the second transistor provided with a first main electrode coupled to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the potential present on the second terminal of the photodetector is present on the first terminal of the photodetector.

2. The device according to claim 1 , wherein the cathode of the photo-detector is connected to the readout circuit, the first transistor is of nMOS type and the second transistor is of pMOS type, or wherein the anode of the photodetector is connected to the readout circuit, the first transistor is of pMOS type and the second transistor is of nMOS type.

3. The device according to claim 1 , wherein the test circuit comprises a current source.

4. The device according to claim 1 , wherein a test voltage is applied to a terminal of the test circuit and the control electrode of the first transistor is connected to an analog device configured to apply a modulation voltage.