Bit-level memory controller and a method thereof

1. A bit-level memory controller adaptable to managing defect bits of a non-volatile memory, comprising:

a memory bus interface controller configured to control data communication in a memory bus disposed between the non-volatile memory and the memory controller;

a bad column management (BCM) unit configured to retrieve a bit-level mapping table, in which defect bits are respectively marked, based on which the BCM unit constructs a bit-level script (BLS) that contains a plurality of entries denoting defect-bit groups respectively;

an internal buffer configured to store data managed by the BCM unit according to the BLS; and

a host bus interface controller configured to control data communication in a host bus disposed between a host and the memory controller;

wherein the BCM unit, in a data read operation, aggregates non-fault data transferred only from consecutive non-defect physical memory locations separated by defect-bit locations denoted by the BLS, and moves the aggregated non-fault data to the internal buffer;

wherein the BCM unit, in a data write operation, moves the data of the internal buffer toward the non-volatile memory when a target address of the data does not hit the BLS, and the BCM unit appends a dummy bit written to the non-volatile memory when the target address of the data hits the BLS.

2. The memory controller of claim 1 , further comprising a first-in-first-out (FIFO) controller that is disposed between the BCM unit and the internal buffer.

3. The memory controller of claim 1 , further comprising a first-in-first-out (FIFO) controller that is disposed between the memory bus interface controller and the BCM unit.

4. The memory controller of claim 1 , wherein each said entry of the BLS comprises a start bit denoting a location of a beginning defect bit of the corresponding defect-bit group, and a skip bit range denoting a length of the corresponding defect-bit group.

5. The memory controller of claim 1 , wherein each said entry of the BLS comprises a start bit denoting a location of a first bit of a bits-group containing a beginning defect bit of the corresponding defect-bit group, and a skip bit range denoting a length of the bits-group or bits-groups containing the corresponding defect-bit group.

6. A bit-level memory controlling method adaptable to managing defect bits of a non-volatile memory, comprising:

retrieving a bit-level mapping table, in which defect bits are respectively marked;

constructing a bit-level script (BLS) according to the bit-level mapping table, the BLS containing a plurality of entries denoting defect-bit groups respectively; and

managing data according to the BLS and then storing the managed data in an internal buffer;

wherein, in a data read operation, non-fault data transferred only from consecutive non-defect physical memory locations separated by defect-bit locations denoted by the BLS are aggregated, and the aggregated non-fault data are moved to the internal buffer;

in a data write operation, data of the internal buffer is moved toward the non-volatile memory when a target address of the data does not hit the BLS, and a dummy bit is appended and written to the non-volatile memory when the target address of the data hits the BLS.

7. The memory controlling method of claim 6 , further comprising a step of performing error control coding (ECC) on the data before the data is stored in the internal buffer.

8. The memory controlling method of claim 6 , wherein each said entry of the BLS comprises a start bit denoting a location of a beginning defect bit of the corresponding defect-bit group, and a skip bit range denoting a length of the corresponding defect-bit group.

9. The memory controlling method of claim 6 , wherein each said entry of the BLS comprises a start bit denoting a location of a first bit of a bits-group containing a beginning defect bit of the corresponding defect-bit group, and a skip bit range denoting a length of the bits-group or bits-groups containing the corresponding defect-bit group.

10. A bit-level memory controller adaptable to managing defect bits of a non-volatile memory, comprising:

a memory bus interface controller configured to control data communication in a memory bus disposed between the non-volatile memory and the memory controller;

a bad column management (BCM) unit configured to retrieve a bit-level mapping table, in which defect bits are respectively marked, based on which the BCM unit constructs a bit-level script (BLS) that contains a plurality of entries denoting defect-bit groups respectively;

an internal buffer configured to store data managed by the BCM unit according to the BLS; and

a host bus interface controller configured to control data communication in a host bus disposed between a host and the memory controller;

wherein the BCM unit, in a data write operation, moves the data of the internal buffer toward the non-volatile memory when a target address of the data does not hit the BLS, and the BCM unit appends a dummy bit written to the non-volatile memory when the target address of the data hits the BLS.

11. The memory controller of claim 10 , further comprising a first-in-first-out (FIFO) controller that is disposed between the BCM unit and the internal buffer.

12. The memory controller of claim 10 , further comprising a first-in-first-out (FIFO) controller that is disposed between the memory bus interface controller and the BCM unit.