Spatial map of mask-pattern defects

1. A computer-implemented method for providing a spatial map of defects in at least a portion of a mask pattern, comprising:

receiving the mask pattern for use in a photolithographic process;

using the computer, calculating a simulated wafer pattern based on a model of a photoresist used in the photolithographic process, the calculated simulated wafer pattern produced at an image plane in the photolithographic process when at least the portion of the mask pattern, illuminated by an associated source pattern, is at an object plane in the photolithographic process;

determining the defects in at least the portion of the mask pattern based on differences between the calculated simulated wafer pattern and a target pattern, wherein the target pattern excludes the defects; and

providing an image of a spatial map for presentation in a graphical user interface associated with a mask-pattern analysis software, the spatial map visually representing the determined defects in at least the portion of the mask pattern.

2. The method of claim 1 , wherein the spatial map includes a 2-dimensional map.

3. The method of claim 1 , wherein the spatial map indicates defect density.

4. The method of claim 1 , wherein the calculated simulated wafer pattern includes an aerial image.

5. The computer-implemented method of claim 1 , wherein the spatial map comprises contour lines reflecting defect densities in at least the portion of the mask pattern.

6. The computer-implemented method of claim 1 , wherein the spatial map comprises clustered markers reflecting defect densities in at least the portion of the mask pattern.

7. The computer-implemented method of claim 1 , further comprising:

classifying the determined defects based on types of geometric features in at least one of the target pattern and the mask pattern; and

filtering the determined defects associated with a plurality of the types of geometric features to select a subset of the determined defects.

8. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a non-transitory computer-readable storage medium and a computer-program mechanism embedded therein to provide a spatial map of defects in at least a portion of a mask pattern, the computer-program mechanism including:

instructions for receiving the mask pattern for use in a photolithographic process;

instructions for calculating a simulated wafer pattern based on a model of a photoresist used in the photolithographic process, the calculated simulated wafer pattern produced at an image plane in the photolithographic process when at least the portion of the mask pattern, illuminated by an associated source pattern, is at an object plane in the photolithographic process;

instructions for determining the defects in at least the portion of the mask pattern based on differences between the calculated simulated wafer pattern and a target pattern, wherein the target pattern excludes the defects; and

instructions for providing an image of a spatial map for presentation in a graphical user interface associated with a mask-pattern analysis software, the spatial map visually representing the determined defects in at least the portion of the mask pattern.

9. The computer-program product of claim 8 , wherein the spatial map includes a 2-dimensional map.

10. The computer-program product of claim 8 , wherein the spatial map indicates defect density.

11. The computer-program product of claim 8 , wherein the calculated simulated wafer pattern includes an aerial image.

12. A computer system for providing a spatial map of defects in at least a portion of a mask pattern, the computer system comprising:

at least one processor;

at least one memory; and

at least one program module, the program module stored in the memory and configured to be executed by the processor, the program module including:

instructions for receiving the mask pattern for use in a photolithographic process;

instructions for calculating a simulated wafer pattern based on a model of a photoresist used in the photolithographic process, the calculated simulated wafer pattern produced at an image plane in the photolithographic process when at least the portion of the mask pattern, illuminated by an associated source pattern, is at an object plane in the photolithographic process;

instructions for determining the defects in at least the portion of the mask pattern based on differences between the calculated simulated wafer pattern and a target pattern, wherein the target pattern excludes the defects; and

instructions for providing an image of a spatial map for presentation in a graphical user interface associated with a mask-pattern analysis software, the spatial map visually representing the determined defects in at least the portion of the mask pattern.

13. The computer system of claim 12 , wherein the spatial map includes a 2-dimensional map.

14. The computer system of claim 12 , wherein the spatial map indicates defect density.

15. A graphical user interface associated with mask-pattern analysis software, comprising:

a window that includes an image of a spatial map presented in the graphical user interface, the spatial map visually representing the determined defects in at least a portion of a mask pattern for use in a photolithographic process, wherein the defects in at least the portion of the mask pattern are determined based on differences between a calculated simulated wafer pattern and a target pattern that excludes the defects; and

wherein the calculated simulated wafer pattern is based on a model of a photoresist used in the photolithographic process, the calculated simulated wafer pattern produced at an image plane in the photolithographic process when at least the portion of the mask pattern, illuminated by an associated source pattern, is at an object plane in the photolithographic process.

16. The graphical user interface of claim 15 , wherein the spatial map includes a 2-dimensional map.

17. The graphical user interface of claim 15 , wherein the spatial map indicates defect density.