Photo luminescence diode and photoluminescence diplay having the same
View Patent ↗A photoluminescence diode which may decrease a driving voltage may include an anode, a cathode, an emission layer interposed between the anode and the cathode, and an electron accepting layer interposed between the emission layer and the cathode and including one material selected from fullerene, methanofullerene, doped fullerene, doped methanofullerene, a derivative thereof, and a mixture thereof.
1. A photoluminescence diode, comprising:
an anode;
a cathode;
an emission layer interposed between the anode and the cathode;
an electron accepting layer interposed between the emission layer and the cathode, and including one material selected from a group consisting of fullerene, methanofullerene, doped fullerene, doped methanofullerene, a derivative thereof, and a mixture thereof; and
an electron injection layer (EIL) disposed between the electron accepting layer and the cathode,
wherein a total thickness of the electron accepting layer and the electron injection layer (EIL) is greater than 20 Å and not greater than 200 Å.
2. The photoluminescence diode of claim 1 , wherein the electron injection layer (EIL) is formed of a material selected from a group consisting of Li, Cs, Mg, LiF, CsF, MgF 2 , NaF, KF, BaF 2 , CaF 2 , Li 2 O, BaO, Cs 2 CO 3 , Cs 2 O, CaO, MgO, and lithium quinolate.
3. The photoluminescence diode of claim 1 , wherein a thickness of the emission layer is greater than 400 Å and not greater than 1000 Å.
4. The photoluminescence diode of claim 3 , wherein the thickness of the emission layer is greater than 500 Å.
5. The photoluminescence diode of claim 1 , wherein a thickness of the electron accepting layer is greater than 10 Å and not greater than 100 Å.
6. A photoluminescence display device comprising the photoluminescence diode of claim 5 ;
said photoluminescence display device further comprising:
a P-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
a P-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the P-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the P-type first transistor;
wherein a first terminal of the P-type second transistor is connected to the cathode of the photoluminescence diode, and a second terminal of the P-type second transistor is connected to a first power source; and
wherein the anode of the photoluminescence diode is connected to a second power source.
7. The photoluminescence display device of claim 6 , wherein when the photoluminescence diode operates in a light excited quenching mode, a voltage level of the first power source is higher than a voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
8. A photoluminescence display device, comprising the photoluminescence diode of claim 5 ;
said photoluminescence display device further comprising:
an N-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
an N-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the N-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the N-type first transistor,
wherein a cathode of the photoluminescence diode is connected to a first power source; and
wherein a first terminal of the N-type second transistor is connected to an anode of the photoluminescence diode and a second terminal of the N-type second transistor is connected to a second power source.
9. The photoluminescence display device of claim 8 , wherein when the photoluminescence diode operates in a light excited quenching mode, the voltage level of the first power source is higher than the voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
10. A photoluminescence display device comprising the photoluminescence diode of claim 4 ;
said photoluminescence display device further comprising:
a P-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
a P-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the P-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the P-type first transistor;
wherein a first terminal of the P-type second transistor is connected to the cathode of the photoluminescence diode, and a second terminal of the P-type second transistor is connected to a first power source; and
wherein the anode of the photoluminescence diode is connected to a second power source.
11. The photoluminescence display device of claim 10 , wherein when the photoluminescence diode operates in a light excited quenching mode, a voltage level of the first power source is higher than a voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
12. A photoluminescence display device, comprising the photoluminescence diode of claim 4 ;
said photoluminescence display device further comprising:
an N-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
an N-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the N-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the N-type first transistor,
wherein a cathode of the photoluminescence diode is connected to a first power source; and
wherein a first terminal of the N-type second transistor is connected to an anode of the photoluminescence diode and a second terminal of the N-type second transistor is connected to a second power source.
13. The photoluminescence display device of claim 12 , wherein when the photoluminescence diode operates in a light excited quenching mode, the voltage level of the first power source is higher than the voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
14. A photoluminescence display device comprising the photoluminescence diode of claim 3 ;
said photoluminescence display device further comprising:
a P-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
a P-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the P-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the P-type first transistor;
wherein a first terminal of the P-type second transistor is connected to the cathode of the photoluminescence diode, and a second terminal of the P-type second transistor is connected to a first power source; and
wherein the anode of the photoluminescence diode is connected to a second power source.
15. The photoluminescence display device of claim 14 , wherein when the photoluminescence diode operates in a light excited quenching mode, a voltage level of the first power source is higher than a voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
16. A photoluminescence display device, comprising the photoluminescence diode of claim 3 ;
said photoluminescence display device further comprising:
an N-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
an N-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the N-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the N-type first transistor,
wherein a cathode of the photoluminescence diode is connected to a first power source; and
wherein a first terminal of the N-type second transistor is connected to an anode of the photoluminescence diode and a second terminal of the N-type second transistor is connected to a second power source.
17. The photoluminescence display device of claim 16 , wherein when the photoluminescence diode operates in a light excited quenching mode, the voltage level of the first power source is higher than the voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
18. A photoluminescence display device comprising the photoluminescence diode of claim 2 ;
said photoluminescence display device further comprising:
a P-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
a P-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the P-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the P-type first transistor;
wherein a first terminal of the P-type second transistor is connected to the cathode of the photoluminescence diode, and a second terminal of the P-type second transistor is connected to a first power source; and
wherein the anode of the photoluminescence diode is connected to a second power source.
19. The photoluminescence display device of claim 18 , wherein when the photoluminescence diode operates in a light excited quenching mode, a voltage level of the first power source is higher than a voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
20. A photoluminescence display device, comprising the photoluminescence diode of claim 2 ;
said photoluminescence display device further comprising:
an N-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
an N-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the N-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the N-type first transistor,
wherein a cathode of the photoluminescence diode is connected to a first power source; and
wherein a first terminal of the N-type second transistor is connected to an anode of the photoluminescence diode and a second terminal of the N-type second transistor is connected to a second power source.
21. The photoluminescence display device of claim 20 , wherein when the photoluminescence diode operates in a light excited quenching mode, the voltage level of the first power source is higher than the voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
22. A photoluminescence display device comprising the photoluminescence diode of claim 1 ;
said photoluminescence display device further comprising:
a P-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
a P-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the P-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the P-type first transistor;
wherein a first terminal of the P-type second transistor is connected to the cathode of the photoluminescence diode, and a second terminal of the P-type second transistor is connected to a first power source; and
wherein the anode of the photoluminescence diode is connected to a second power source.
23. The photoluminescence display device of claim 22 , wherein when the photoluminescence diode operates in a light excited quenching mode, a voltage level of the first power source is higher than a voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.
24. A photoluminescence display device, comprising the photoluminescence diode of claim 1 ;
said photoluminescence display device further comprising:
an N-type first transistor for transferring a voltage-level data signal in response to a present scan signal;
an N-type second transistor for generating a driving current of the photoluminescence diode according to the voltage-level data signal transferred by the N-type first transistor; and
a pixel including a capacitor for storing the voltage-level data signal transferred by the N-type first transistor,
wherein a cathode of the photoluminescence diode is connected to a first power source; and
wherein a first terminal of the N-type second transistor is connected to an anode of the photoluminescence diode and a second terminal of the N-type second transistor is connected to a second power source.
25. The photoluminescence display device of claim 24 , wherein when the photoluminescence diode operates in a light excited quenching mode, the voltage level of the first power source is higher than the voltage level of the second power source; and
wherein when the photoluminescence diode operates in an electric field excited mode, the voltage level of the first power source is lower than the voltage level of the second power source.