Method for producing graphene oxide with tunable gap
A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.
1. A method of fabricating a sp 2 structure graphene oxide material comprising:
providing a substrate;
depositing a sp 2 structure graphene layer onto said substrate; and
oxidizing at least a portion of the sp 2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp 2 structure graphene layer, wherein the oxygen-to-carbon atomic ratio of the oxidized sp 2 structure graphene layer is no greater than 21% such that the oxidation is confined to the graphene layer.
2. The method of claim 1 , wherein—prior to a dry oxidation treatment—at least one portion of the sp 2 structure graphene layer is masked to prevent oxidation in at least those portions.
3. The method of claim 2 , wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp 2 structure graphene portions, each of said portions having a desired band gap.
4. The method of claim 3 , wherein each of the portions have different band gaps.
5. The method of claim 1 , wherein the dry oxidation treatment is a plasma oxidation treatment.
6. The method of claim 5 , wherein the plasma oxidation treatment used is a remote indirect plasma oxidation treatment.
7. The method of claim 1 , wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment.
8. The method of claim 1 , wherein the band gap is proportional to the concentration of oxidation within the sp 2 structure graphene layer.
9. The method of claim 1 wherein the band gap range from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp 2 structure graphene layer is from about 9% to 21%.
10. The method of claim 1 , wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.
11. The method of claim 1 , wherein the sp 2 structure graphene layer is deposited by chemical vapor deposition.
12. The method of claim 1 , wherein the sp 2 structure graphene layer is deposited by micromechanical exfoliation.
13. A method of fabricating a sp 2 structure graphene oxide material comprising:
providing a substrate;
depositing a sp 2 structure graphene layer onto said substrate;
masking at least one portion of the sp 2 structure graphene layer; and
oxidizing at least a portion of the unmasked sp 2 structure graphene layer with a dry oxidation treatment, for a period of time sufficient to obtain a band gap by introducing defects into the sp 2 structure graphene layer, wherein the oxygen-to-carbon atomic ratio of the oxidized sp 2 structure graphene layer is no greater than 21% such that the oxidation is confined to the sp 2 structure graphene layer.
14. The method of claim 13 , wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp 2 structure graphene portions, each of said portions having a desired band gap.
15. The method of claim 14 , wherein each of the portions have different band gaps.
16. The method of claim 13 , wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp 2 structure graphene layer.
17. A method of fabricating a sp 2 structure graphene oxide material comprising:
providing a substrate;
depositing a sp 2 structure graphene layer onto said substrate;
masking at least one portion of the sp 2 structure graphene layer;
oxidizing at least a portion of the unmasked sp 2 structure graphene layer with a dry oxidation treatment, for a period of time sufficient to obtain a band gap by introducing defects into the sp 2 structure graphene layer, wherein the oxygen-to-carbon atomic ratio of the oxidized sp 2 structure graphene layer is no greater than 21%, such that the oxidation is confined to the sp 2 structure graphene layer; and
repeating and iterating the masking and oxidation to obtain a plurality of distinct sp 2 structure graphene oxide layers, each having different band gaps.
18. The method of claim 17 , wherein each of the portions have different band gaps.
19. The method of claim 17 , wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp 2 structure graphene layer.
20. The method of claim 1 , wherein the substrate is Nickel coated.
21. The method of claim 13 , wherein the substrate is Nickel coated.
22. The method of claim 17 , wherein the substrate is Nickel coated.