Device using oxide semiconductor, display device, and electronic apparatus

1. A device using an oxide semiconductor, the device comprising:

a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material and at least one wiring intersection portion,

wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect,

wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and

wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

2. The device using an oxide semiconductor according to claim 1 , wherein a peripheral end of the oxide semiconductor layer is electrically short-circuited with the upper interconnect.

3. The device using an oxide semiconductor according to claim 2 , wherein the peripheral end of the oxide semiconductor layer exists at the same outer circumferential position as an outer circumferential position of a peripheral end of the channel protective layer.

4. The device using an oxide semiconductor according to claim 1 , wherein a peripheral end of the oxide semiconductor layer is electrically insulated from the upper interconnect.

5. A device using an oxide semiconductor, the device comprising:

a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material,

wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film is over the lower interconnect with intermediary of a gate insulating film.

6. A device using an oxide semiconductor, the device comprising:

a circuit part configured to include a thin film transistor and at least one wiring intersection portion,

wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film includes an oxide semiconductor layer and a protective layer, the oxide semiconductor layer and the protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and

wherein the protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer and the upper interconnect.

7. A display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material and at least one wiring portion,

wherein the wiring portion has an interlayer insulating film between a lower interconnect and a upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and

wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

8. The display device according to claim 7 , wherein the circuit part is mounted on the same substrate as a substrate of the pixel array part.

9. A display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material,

wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film over the lower interconnect with intermediary of a gate insulating film.

10. The display device according to claim 9 , wherein the circuit part is mounted on the same substrate as a substrate of the pixel array part.

11. Electronic apparatus having a display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material and at least one wiring intersection portion,

wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and

wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

12. Electronic apparatus having a display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material,

wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and

wherein the interlayer insulating film is over the lower interconnect with intermediary of a gate insulating film.