Optoelectronic component and method for the production thereof
View Patent ↗An optoelectronic component having a substrate ( 1 ), an anode ( 2 ) and a cathode ( 10 ) and at least one active layer ( 6 ) disposed between the anode and the cathode. An amorphous dielectric layer ( 3 ) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.
1. An optoelectronic component comprising:
a substrate;
an anode and a cathode; and
at least one active layer which is disposed between the anode and the cathode,
wherein disposed directly on the cathode-side surface of the anode is an amorphous dielectric layer which contains or consists of a metal oxide, a metal nitride or a metal oxynitride, wherein the metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc, wherein a hole injection layer having a thickness of less than or equal to 20 nm is disposed directly on the dielectric layer.
2. The optoelectronic component as claimed in claim 1 , wherein the dielectric layer has a thickness of 0.1 to 100 nm.
3. The optoelectronic component as claimed in claim 1 , wherein the dielectric layer consists of aluminum oxide.
4. The optoelectronic component as claimed in claim 1 , wherein the anode comprises a transparent conductive oxide.
5. The optoelectronic component as claimed in claim 1 , wherein the homogeneity of the layer thickness of the dielectric layer is independent of the surface structure of the layers directly adjoining the dielectric layer.
6. The optoelectronic component as claimed in claim 1 wherein the thickness variation of the dielectric layer is not greater than 10%.
7. The optoelectronic component as claimed in claim 1 , wherein the dielectric layer can be produced by means of atomic layer deposition.
8. The optoelectronic component as claimed in claim 1 , which is formed as an OLED.
9. A method of coating an electrode, in particular an anode for an optoelectronic component as claimed in claim 1 , having a dielectric layer which contains or consists of a metal oxide, a metal nitride or a metal oxynitride, wherein the metal M is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc, comprising the steps of:
A) providing a substrate having an electrode layer disposed thereon and
B) depositing the dielectric layer by means of atomic layer deposition, so that the electrode layer is completely covered by the dielectric layer, and
C) subsequently depositing a hole injection layer having a thickness of less than or equal to 20 nm directly on the dielectric layer.
10. The method as claimed in claim 9 , wherein step B) is conducted by means of plasma-free atomic layer deposition.
11. The method as claimed in claim 9 ,
wherein during step B) the following partial steps are successively repeated multiple times in the stated sequence:
B1) adsorption pulse, in which the substrate is subjected to a precursor or an oxidizing agent or reducing agent;
B2) purging step or evacuation step;
B3) reaction pulse, in which the substrate having the adsorbed precursor is subjected to an oxidizing agent or reducing agent or the substrate having the adsorbed oxidizing agent or reducing agent is subjected to a precursor; and,
B4) purging step or evacuation step.
12. The method as claimed in claim 9 , wherein step B) is conducted at a temperature of at least 60° C., and at a pressure of no greater than 50 mbar.
13. The method as claimed in claim 9 , wherein the oxidizing agent is selected from the group consisting of water, ozone, oxygen, hydrogen peroxide and mixtures of the aforementioned substances.
14. The method as claimed in claim 9 , wherein the precursor is a metal alkyl, a metal alkoxide, a metal dialkylamide and/or a metal halide.
15. The optoelectronic component as claimed in claim 1 , wherein the dielectric layer has a thickness of 0.1 to 3 nm.
16. The optoelectronic component as claimed in claim 4 , wherein the transparent conductive oxide is indium tin oxide.
17. The optoelectronic component as claimed in claim 1 , wherein the homogeneity of the layer thickness of the dielectric layer is independent of the surface structure of the anode.
18. The optoelectronic component as claimed in claim 1 , wherein the dielectric layer can be produced by plasma-free atomic layer deposition.
19. The method as claimed in claim 9 , wherein step B) is conducted at a temperature of 80° C. to 260° C., and at a pressure of no greater than 0.1 mbar to 5 mbar.