IP Library Granted Patent US 8,310,679
Granted Patent B2
US 8,310,679 · App. 13/318,601 · Granted Nov 13, 2012

Apparatus and methods for sensing or imaging using stacked thin films

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Quick Facts
Patent No.
US 8,310,679
App. No.
13/318,601
Granted
Nov 13, 2012
Kind
B2
Abstract

Technologies are generally described for methods and systems for sensing or imaging. The apparatus includes a stack of a plurality of thin films, such as polymer thin films. The stack has a substantially imaginary total reflectance coefficient.

Claims (343)

1. An apparatus for sensing or imaging with light at a wavelength λ, the apparatus comprising:

a stack including a plurality of thin films;

wherein the stack has a substantially imaginary total reflectance coefficient for the light at the wavelength λ,

wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero.

2. The apparatus of claim 1 , wherein the plurality of thin films comprise polymer thin films.

3. The apparatus of claim 1 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

4. The apparatus of claim 3 , wherein the stack further includes:

a top layer; and

a substrate.

5. The apparatus of claim 4 , wherein the top layer has a refractive index (n l ), a thickness (d l ), and a reflectance (r l ) selected such that they satisfy the following equations:

r

s

=

r

s

-

r

l

1

-

r

s

r

l

and

r

net

=

r

l

+

r

s

-

j

2

ϕ

l

1

+

r

l

r

s

-

j

2

ϕ

l

=

±

j

β

[

r

s

(

1

+

r

l

2

)

]

2

-

[

r

l

(

1

+

r

s

2

)

]

2

(

1

-

r

l

2

r

s

2

)

2

=

β

2

cos

(

4

π

n

l

d

l

λ

)

=

-

(

r

l

r

s

)

(

1

+

r

s

2

1

+

r

l

2

)

wherein β is an amplitude of a total reflectance coefficient r net of the stack including the top layer, wherein the total reflectance coefficient is imaginary and has a form of ±jβ, wherein j is the imaginary unit and ±j=√−1, and r s and r s ′ are the reflectance of the substrate and the plurality of bi-layers combined, calculated with air and the top layer as the ambient medium, respectively.

6. The apparatus of claim 5 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

7. The apparatus of claim 6 , wherein the high refractive index is about 1.45-1.65, and the low refractive index is lower than the high refractive index.

8. The apparatus of claim 6 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength λ.

9. The apparatus of claim 1 , wherein the apparatus is configured to sense or image a sample disposed over the stack through a change in reflectance caused by the presence of the sample.

10. The apparatus of claim 9 , wherein the sample comprises one of a biological sample, a chemical material, or an optical material, and wherein the apparatus is configured as one of a biosensor, a chemical sensor, or a color sensor.

11. A method of making a sensor or an imager, the method comprising:

selecting materials for a top layer, a plurality of thin films, and a substrate; and

forming a stack with the top layer, the plurality of thin films, and the substrate,

wherein the materials are selected such that stack has a substantially imaginary total reflectance for light at a wavelength λ used for imaging or sensing, and

wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero.

12. The method of claim 11 , wherein the plurality of thin films comprise polymer thin films.

13. The method of claim 11 , wherein the forming comprises disposing the plurality of thin films as a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

14. The method of claim 13 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength of the light used for sensing in the respective layer.

15. The method of claim 11 , wherein the selecting comprises selecting a refractive index (n l ), a thickness (d l ), and a reflectance (r l ) of the top layer such that they satisfy the following equations:

r

s

=

r

s

-

r

l

1

-

r

s

r

l

and

r

net

=

r

l

+

r

s

-

j

2

ϕ

l

1

+

r

l

r

s

-

j

2

ϕ

l

=

±

j

β

[

r

s

(

1

+

r

l

2

)

]

2

-

[

r

l

(

1

+

r

s

2

)

]

2

(

1

-

r

l

2

r

s

2

)

2

=

β

2

cos

(

4

π

n

l

d

l

λ

)

=

-

(

r

l

r

s

)

(

1

+

r

s

2

1

+

r

l

2

)

wherein β is an amplitude of a total reflectance coefficient r net of the stack including the top layer, wherein the total reflectance coefficient is imaginary and has a form of ±jβ, wherein j is the imaginary unit and ±j=√−1, and r s and r s ′ are the reflectance of the substrate and the plurality of bi-layers combined, calculated with air and the top layer as the ambient medium, respectively, and wherein λ is the wavelength of the light used for imaging or sensing.

16. A method of sensing or imaging a sample, the method comprising:

providing a stack comprising a plurality of polymer thin films, wherein the stack has a substantially imaginary total reflectance for light at a wavelength λ used for imaging or sensing, wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero;

directing a beam of light toward the stack in the absence of the sample;

measuring the reflectance of the stack in the absence of the sample;

disposing a sample over the stack;

measuring the reflectance of the stack in the presence of the sample; and

obtaining the difference in reflectance of the stack in the presence and absence of the sample.

17. The method of claim 16 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

18. The method of claim 17 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength λ of the light used for imaging or sensing in the respective layer.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →