Current steering element, memory element, memory, and method of manufacturing current steering element
View Patent ↗Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode ( 32 ), a second electrode ( 31 ), and a current steering layer ( 33 ). The current steering layer ( 33 ) comprises SiN x (where 0<x≦0.85) added with hydrogen or fluorine. When D (D=D 0 ×10 22 atoms/cm 3 ) represents a density of hydrogen or fluorine, d (nm) represents a thickness of the current steering layer ( 33 ), and V 0 (V) represents a maximum value applicable to between the first electrode ( 32 ) and the second electrode ( 31 ), D, x, d, and V 0 satisfy the following Formulae. (ln(10000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 ≦V 0 (ln(1000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 −(ln(10000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 /2≧0 wherein C=k1×D 0 k2 , and α, β, γ, k1, and k2 are constants.
1. A current steering element that controls a current flowing when an electrical pulse with positive and negative polarities is applied, said current steering element comprising:
a first electrode;
a second electrode; and
a current steering layer provided between said first electrode and said second electrode,
wherein said current steering layer comprises:
SiN x (where 0<x≦0.85); and
hydrogen, and
when D (D=D 0 ×10 22 atoms/cm 3 ) represents a density of the hydrogen, d (nm) represents a thickness of said current steering layer, V 0 (V) represents a maximum value applicable to both of said first electrode and said second electrode, and x, D, d, and V 0 satisfy Formulae (1) and (2):
(ln(10000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 ≦V 0 (1)
(ln(1000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 −(ln(10000( C ·exp(α· d )exp(β· x )) −1 )γ) 2 /2≧0 (2)
wherein C=k1×D 0 k2 , α=−6.25×10 −1 , β=−11.7, γ=9.76, k1=5.23×10 −4 , and k2=−5.26.
2. The current steering element according to claim 1 ,
wherein the density D of the hydrogen satisfies 0.75×10 22 (atoms/cm 3 )≦D≦2.0×10 22 (atoms/cm 3 ).
3. The current steering element according to claim 1 ,
wherein the thickness d is 5 nm or more.
4. The current steering element according to claim 3 ,
wherein the thickness d ranges from 5 nm to 30 nm.
5. The current steering element according to claim 1 ,
wherein the maximum V 0 of the voltage applicable between said first electrode and said second electrode is 5 V or less.
6. A memory element comprising:
a nonvolatile variable resistance element having an electrical resistance value varying when an electrical pulse with one of a positive polarity and a negative polarity is applied; and
said current steering element according to claim 1 , said current steering element being connected in series to said nonvolatile variable resistance element to control a current flowing through said nonvolatile variable resistance element when the electrical pulse is applied to said nonvolatile variable resistance element.
7. A memory, comprising:
a plurality of bit lines;
a plurality of word lines arranged to be three-dimensionally crossed with said bit lines at crosspoints; and
a plurality of memory elements including said memory element according to claim 6 ,
wherein each of said memory elements is arranged at a corresponding one of the crosspoints, and the each of said memory elements having one end connected to a corresponding one of said bit lines and an other end connected to a corresponding one of said word lines at the corresponding one of the crosspoints.