Memristors with asymmetric electrodes
View Patent ↗Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
1. A memristor device, comprising:
an active region comprising a primary active region and a secondary active region, wherein the secondary active region is a source of dopants for the primary active region;
a first electrode disposed on a first surface of the active region, the first electrode configured with a smaller width than the active region in a first direction; and
a second electrode disposed on a second surface of the active region, the second surface opposite the first surface and the second electrode configured with a larger width than the active region in a second direction, wherein application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode; and
a patterned opening in at least one of the electrodes, the patterned opening concentrating the electric field within the sub-region.
2. The memristor of claim 1 wherein the first direction is substantially orthogonal to the second direction.
3. The memristor of claim 1 wherein the patterned opening further comprises one or more edges.
4. The memristor of claim 1 wherein the patterned opening further comprises one of: a clover-like configuration, a circle, a square, a rectangle, an ellipse, an irregular shape.
5. The memristor of claim 1 wherein the first electrode and the second electrode are selected from a group consisting of platinum, aluminum, gold, silver, copper, tungsten, or any other suitable metal, metallic compound or semiconductor.
6. The memristor of claim 1 wherein the width of the first electrode in the first direction is smaller than the width of the second electrode in the second direction.
7. The memristor of claim 1 wherein the patterned opening is filled with a different material then a corresponding electrode.
8. The memristor of claim 7 wherein the different material is a dielectric material.
9. The memristor of claim 1 in which edges of the first electrode are adjacent to a surface of the active region.
10. The memristor of claim 1 in which edges of the second electrode are adjacent to a surface of the active region.
11. The memristor of claim 1 in which the memristor is part of a crossbar array.
12. A crossbar comprising:
a first layer of substantially parallel nanowires;
a second layer of substantially parallel nanowires overlaying the first layer of nanowires;
at least one nanowire intersection forming a memristor device, each memristor device including an active region disposed between a nanowire in the first layer and a second nanowire in the second layer, wherein the nanowire in the second layer is configured with a larger width than the active region in a first direction and the nanowire in the first layer is configured with a smaller width than the active region in a second direction, wherein application of a voltage to at least one of the first and second nanowires produces an electric field across a sub-region within the active region between the first electrode and the second electrode; and
a patterned opening in at least one of the nanowires at a nanowire intersection, the patterned opening concentrating the electric field within the sub-region.
13. The memristor of claim 12 wherein the nanowires in the first layer are approximately perpendicular, in orientation, to the nanowires in the second layer.
14. The memristor of claim 12 wherein the patterned opening further comprises one or more edges.
15. The memristor of claim 12 wherein the patterned opening further comprises one of: a clover-like configuration, a circle, a square, a rectangle, an ellipse, or an irregular shape.
16. The memristor of claim 12 wherein the active region further comprises a primary active region and a secondary active region, wherein the secondary active region is a source of dopants for the primary active region.
17. The memristor of claim 12 wherein the nanowires in the first layer and the nanowires in the second layer are composed of materials selected from a group consisting of platinum, aluminum, gold, silver, copper, tungsten, or any other suitable metal, metallic compound or semiconductor.
18. The memristor of claim 12 in which the patterned opening is formed in a nanowire of the first layer and a nanowire of the second layer that intersect one another.
19. A memristor device, comprising:
an active region having a primary active layer and a secondary active layer, wherein the secondary active layer is a source of dopants for the primary active layer;
a first electrode disposed on a first surface of the active region, the first electrode configured with a smaller width than the active region in a first direction; and
a second electrode disposed on a second surface of the active region, the second surface opposite the first surface and the second electrode configured with a larger width than the active region in a second direction, wherein application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode;
a first patterned opening in the first electrode; and
a second patterned opening in the second electrode.