Group III nitride semiconductor and group III nitride semiconductor structure
View Patent ↗There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
1. A group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface, the group III nitride semiconductor comprising:
a polarity inversion layer corresponding to an area of the group III nitride semiconductor layer located along the second surface, and formed to be continuous with the other area of the group III nitride semiconductor layer, the polarity inversion layer having a crystal arrangement of the other area inversed such that the second surface has a group III polarity identical to a polarity of the first surface.
2. The group III nitride semiconductor of claim 1 , wherein the polarity inversion layer has a thickness of 5 to 2000 nm.
3. The group III nitride semiconductor of claim 1 , wherein the area corresponding to the polarity inversion layer has a composition identical to a composition of the other area.
4. The group III nitride semiconductor of claim 1 , wherein the group III nitride semiconductor is a semiconductor represented by AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
5. The group III nitride semiconductor of claim 1 , wherein the group III nitride semiconductor is a GaN semiconductor, and
the group III polarity is a gallium polarity.
6. A group III nitride semiconductor structure comprising:
a first group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface; and
a second group III nitride semiconductor formed on the second surface of the first group III nitride semiconductor,
wherein the first group III nitride semiconductor comprises a polarity inversion layer corresponding to an area of the first group III nitride semiconductor layer located along the second surface, and formed continuously with the other area of the first group III nitride semiconductor, the polarity inversion layer having a crystal arrangement of the other area inversed such that the second surface has a group III polarity identical to a polarity of the first surface.
7. The group III nitride semiconductor structure of claim 6 , wherein the polarity inversion layer has a thickness of 5 to 2000 nm.
8. The group III nitride semiconductor structure of claim 6 , wherein the area corresponding to the polarity inversion layer has a composition identical to a composition of the other area of the first group III nitride semiconductor.
9. The group III nitride semiconductor structure of claim 8 , wherein the second group III nitride semiconductor has a composition different from a composition of the first group III nitride semiconductor or a conductivity type different from a conductivity type of the first group III nitride semiconductor.
10. The group III nitride semiconductor structure of claim 9 , wherein the second group III nitride semiconductor comprises a plurality of group III nitride semiconductor layers each including an active layer, and
the group III nitride semiconductor structure comprises a semiconductor light emitting device.
11. The group III nitride semiconductor structure of claim 6 , wherein the first group III nitride semiconductor is a semiconductor represented by AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
12. The group III nitride semiconductor structure of claim 6 , wherein the first group III nitride semiconductor is a GaN semiconductor, and
the group III polarity is a gallium polarity.