Ferromagnetic laminated structure and manufacturing method thereof
View Patent ↗A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG. 2 (A) shows Si (100) plane, FIG. 2 (B) MgO (100) plane, and FIG. 2 (C) the state of these two planes being lattice-matched. Si (100) plane in FIG. 2 (A) is constituted by Si atoms 111 alone, while MgO (100) plane in FIG. 2 (B) is constituted by Mg atoms 121 and oxygen (O) atoms 122 . MgO (100) plane is grown on Si (100) plane, and as shown in FIG. 2 (C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.
1. A ferromagnetic laminated structure in which a magnesium oxide (MgO) layer and a ferromagnetic metal layer are sequentially formed on a silicon (Si) single crystal for injecting electrons from the ferromagnetic metal layer into the Si single crystal, the ferromagnetic laminated structure comprising:
the substrate plane of the Si single crystal being the (100) plane, and the growth plane of the MgO layer being the (100) plane; and
the [110] direction on the substrate plane of the Si single crystal and the [100] direction on the growth plane of the MgO layer being parallel to each other.
2. The ferromagnetic laminated structure according to claim 1 , wherein the ferromagnetic metal layer is formed of iron (Fe) or an alloy of iron and cobalt (Co) (an FeCo alloy), the growth plane of the ferromagnetic metal layer being the (100) plane, and the [110]direction on the substrate plane of the Si single crystal, the [100] direction on the growth plane of the MgO layer, and the [110] direction on the growth plane of the ferromagnetic metal layer being parallel to one another.
3. The ferromagnetic laminated structure according to claim 1 , wherein the MgO layer has a thickness in the range of 0.6 nm to 5 nm.
4. The ferromagnetic laminated structure according to claim 2 , wherein the MgO layer has a thickness in the range of 0.6 nm to 5 nm.
5. A method of manufacturing the ferromagnetic laminated structure according to claim 1 , comprising:
forming a 2×1 reconstructed surface on the substrate surface of the Si single crystal, being followed by sequentially forming the MgO layer and the ferromagnetic metal layer in vacuum.
6. A method of manufacturing the ferromagnetic laminated structure according to claim 2 , comprising:
forming a 2×1 reconstructed surface on the substrate surface of the Si single crystal, being followed by sequentially forming the MgO layer and the ferromagnetic metal layer in vacuum.
7. A method of manufacturing the ferromagnetic laminated structure according to claim 3 , comprising:
forming a 2×1 reconstructed surface on the substrate surface of the Si single crystal, being followed by sequentially forming the MgO layer and the ferromagnetic metal layer in vacuum.
8. A method of manufacturing the ferromagnetic laminated structure according to claim 4 , comprising:
forming a 2×1 reconstructed surface on the substrate surface of the Si single crystal, being followed by sequentially forming the MgO layer and the ferromagnetic metal layer in vacuum.
9. The method of manufacturing the ferromagnetic laminated structure according to claim 5 , wherein the MgO layer is formed by the MBE (Molecular Beam Epitaxy) technique or the electron-beam evaporation technique.
10. The method of manufacturing the ferromagnetic laminated structure according to claim 6 , wherein the MgO layer is formed by the MBE (Molecular Beam Epitaxy) technique or the electron-beam evaporation technique.
11. The method of manufacturing the ferromagnetic laminated structure according to claim 7 , wherein the MgO layer is formed by the MBE (Molecular Beam Epitaxy) technique or the electron-beam evaporation technique.
12. The method of manufacturing the ferromagnetic laminated structure according to claim 8 , wherein the MgO layer is formed by the MBE (Molecular Beam Epitaxy) technique or the electron-beam evaporation technique.