Photoelectric conversion element
View Patent ↗An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided.
1. A photoelectric conversion element comprising:
a photoelectric conversion layer;
a fine periodic structure over a first surface of the photoelectric conversion layer;
a micro-texture structure beneath a second surface of the photoelectric conversion layer; and
a reflective electrode beneath the micro-texture structure,
wherein the fine periodic structure comprises microstructures with an aspect ratio of 3 or more and 15 or less with a period of 60 nm or more and 500 nm or less,
wherein the micro-texture structure comprises structures with an aspect ratio of 0.5 or more and 3 or less with a period of 2 μm or more and 100 μm or less, and
wherein the reflective electrode has reflectivity of 10% or more and less than 100%.
2. The photoelectric conversion element according to claim 1 , wherein 10% or more and 99% or less of incident light with a light wavelength contributing to photoelectric conversion reaches the reflective electrode.
3. The photoelectric conversion element according to claim 1 ,
wherein the micro-texture structure has a surface that forms an angle of 8° or more and less than 45° or 49° or more and less than 90° with respect to the first surface of the photoelectric conversion layer.
4. The photoelectric conversion element according to claim 1 ,
wherein the fine periodic structure comprises a semiconductor with a first conductivity type; and the micro-texture structure comprises a semiconductor with a second conductivity type opposite the first conductivity type.
5. The photoelectric conversion element according to claim 1 ,
wherein the photoelectric conversion layer comprises a single crystal silicon substrate; and the micro-texture structure has a surface along a crystal orientation of the single crystal silicon substrate.
6. The photoelectric conversion element according to claim 1 ,
wherein the fine periodic structure is formed over the first surface of the photoelectric conversion layer by attaching a film over the photoelectric conversion layer.