THIN FILM BURIED ANODE DEVICES
A reverse configuration, lithium thin film battery ( 300 ) having a buried lithium anode layer ( 305 ) and process for making the same. The present invention is formed from a precursor composite structure ( 200 ) made by depositing electrolyte layer ( 204 ) onto substrate ( 201 ), followed by sequential depositions of cathode layer ( 203 ) and current collector ( 202 ) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer ( 305 ) is formed via electroplating a lithium anode layer at the interface of substrate ( 201 ) and electrolyte film ( 204 ). The electroplating is accomplished by applying a current between anode current collector ( 201 ) and cathode current collector ( 202 ).
1 - 42 . (canceled)
43 . A process for producing a thin film structure, comprising:
a) depositing a solid state electrolyte material onto an exposed, conductive face of a substrate, wherein the solid state electrolyte material is a conductor of lithium ions;
b) depositing a cathode layer comprising a transition metal oxide upon an exposed face of the solid state electrolyte material;
c) depositing a cathode current collector layer comprising an electron conducting material upon an exposed face of the cathode film layer;
d) forming an anode layer comprising a metal between the conductive face of the substrate and the solid state electrolyte material by flowing a current between the substrate conductive face and the cathode current collector layer, whereby the cathode layer is oxidized and metal ions from the cathode layer are reduced to a solid state metal at the interface of the solid state electrolyte material and the substrate to form the anode layer; and
e) maintaining the current flow until the anode layer contains a desired amount of metal.
44 . The process of claim 43 , wherein the layers are deposited by vacuum evaporation, reactive sputtering, or chemical vapor deposition.
45 . The process of claim 43 , wherein the substrate comprises a refractory metal, a ferrous alloy, or a non-electrical conductor onto which a conductive film has been deposited.
46 . The process of claim 45 , wherein the non-electrical conductor is glass or plastic.
47 . The process of claim 43 , wherein the solid state electrolyte material comprises sub-stoichiometric lithium phosphorous oxynitride.
48 . The process of claim 43 , wherein the cathode layer comprises a lithiated transition metal oxide.
49 . The process of claim 48 , wherein the cathode layer comprises lithium vanadate, lithium manganate, lithium nickelate, or lithium cobaltate.
50 . The process of claim 43 , wherein the cathode layer comprises vanadium.
51 . The process of claim 43 , wherein the cathode layer comprises vanadium oxide.
52 . The process of claim 43 , wherein the cathode current collector comprises an electrically conductive metal.
53 . A thin film structure, comprising:
a) a substrate layer that has at least one conductive face and is characterized by its ability to support layers deposited onto it;
b) an anode layer comprising a metal in contact with a conductive face of the substrate layer;
c) an electrolyte layer comprising a solid state electrolyte material that is a conductor of lithium ions, one face of which is in contact with the anode layer;
d) a cathode layer comprising a transition metal oxide that is in contact with a face of the electrolyte layer that is not in contact with the anode layer; and
e) a cathode current collector layer comprising an electron conducting material that is in contact with a face of the cathode layer that is not in contact with the electrolyte layer.
54 . The thin film structure of claim 53 , wherein the substrate layer comprises a refractory metal, a ferrous alloy, or a non-electrical conductor onto which a conductive film has been deposited.
55 . The device of claim 54 , wherein the non-electrical conductor is glass.
56 . The thin film structure of claim 53 , wherein the solid state electrolyte material comprises sub-stoichiometric lithium phosphorous oxynitride.
57 . The thin film structure of claim 53 , wherein the cathode layer comprises a lithiated transition metal oxide.
58 . The device of claim 57 , wherein the cathode layer comprises lithium vanadate, lithium manganate, lithium nickelate, or lithium cobaltate.
59 . The thin film structure of claim 53 , wherein the cathode layer comprises vanadium.
60 . The thin film structure of claim 53 , wherein the cathode layer comprises vanadium oxide.
61 . The thin film structure of claim 53 , wherein the cathode current collector layer comprises an electrically conductive metal.