IP Library Granted Patent US 8,715,597
Granted Patent B2
US 8,715,597 · App. 13/328,030 · Granted May 6, 2014

Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations

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Quick Facts
Patent No.
US 8,715,597
App. No.
13/328,030
Granted
May 6, 2014
Kind
B2
Abstract

Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Claims (31)

1. A system for producing polycrystalline silicon, the system being substantially closed-loop with respect to hydrogen and chlorine-containing compounds, the system comprising:

a chlorination reactor in which hydrogen chloride is contacted with silicon to produce trichlorosilane and silicon tetrachloride;

a disproportionation system in which trichlorosilane is converted to silane or dichlorosilane;

a fluidized bed reactor in which silane or dichlorosilane is decomposed to produce polycrystalline silicon; and

a hydrogenation reactor in which silicon tetrachloride and hydrogen are introduced to produce trichlorosilane.

2. The system as set forth in claim 1 wherein the disproportionation system comprises a system in which trichlorosilane is converted to silane and wherein the fluidized bed reactor comprises a reactor in which silane is decomposed to produce polycrystalline silicon.

3. The system as set forth in claim 2 further comprising:

a conveying apparatus for conveying trichlorosilane from the hydrogenation reactor to the disproportionation system;

a conveying apparatus for conveying silane from the disproportionation system to the fluidized bed reactor;

a conveying apparatus for conveying trichlorosilane from the chlorination reactor to the disproportionation system; and

a conveying apparatus for conveying silicon tetrachloride from the disproportionation system to the hydrogenation reactor.

4. The system as set forth in claim 1 further comprising a separation system to which hydrogen, hydrogen chloride, silicon tetrachloride and trichlorosilane are introduced to separate hydrogen, hydrogen chloride and the chlorosilanes.

5. The system as set forth in claim 4 further comprising:

a conveying apparatus for conveying trichlorosilane and silicon tetrachloride from the separation system to the disproportionation system;

a conveying apparatus for conveying hydrogen chloride from the separation system to the chlorination reactor;

a conveying apparatus for conveying hydrogen from the separation system to the hydrogenation reactor;

a conveying apparatus for conveying hydrogenated gas from the hydrogenation reactor to the separation system; and

a conveying apparatus for conveying chlorinated gas from the chlorination reactor to the separation system.

6. The system as set forth in claim 2 wherein the disproportionation system comprises:

a first distillation column for separating silicon tetrachloride into a bottoms fraction and to separate dichlorosilane and trichlorosilane into an overhead fraction;

a second distillation column for separating trichlorosilane into a bottoms fraction and dichlorosilane into an overhead fraction;

a first disproportionation reactor for producing a first disproportionation reactor product gas comprising dichlorosilane and silicon tetrachloride; and

a second disproportionation reactor for producing a second disproportionation reactor product gas comprising silane and trichlorosilane; and

a third distillation column for separating silane into an overhead fraction and trichlorosilane into a bottoms fraction.

7. The system as set forth in claim 4 wherein the separation system comprises:

a chlorosilane separator for separating trichlorosilane and silicon tetrachloride from hydrogen and hydrogen chloride; and

a hydrogen separator for separating hydrogen from hydrogen chloride.

8. The system as set forth in claim 7 wherein the chlorosilane separator is a vapor-liquid separator.

9. The system as set forth in claim 7 wherein the hydrogen separator is a vapor-liquid separator.

10. The system as set forth in claim 7 wherein the hydrogen separator is a bubbler.

11. The system as set forth in claim 1 further comprising a stripper column to remove light end impurities prior to introduction of silicon tetrachloride and trichlorosilane into the disproportionation system.

Assignments (12)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2017
From: SUNEDISON, INC.; SUNEDISON PRODUCTS SINGAPORE PTE. LTD.; MEMC PASADENA, INC.; SOLAICX
To: CORNER STAR LIMITED
Reel/Frame 042351/0659 →
PATENT SECURITY AGREEMENT Recorded Apr 28, 2016
From: SUNEDISON, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS ADMINISTRATIVE AGENT
Reel/Frame 038557/0472 →
SECURITY INTEREST Recorded Jan 13, 2016
From: SUNEDISON, INC.; SUN EDISON LLC; SOLAICX; NVT, LLC
To: WILMINGTON TRUST, NATIONAL ASSOCIATION, SOLELY IN ITS CAPACITY AS COLLATERAL TRUSTEE
Reel/Frame 037508/0606 →
RELEASE OF SECURITY INTEREST Recorded Jan 13, 2016
From: GOLDMAN SACHS BANK USA, AS ADMINISTRATIVE AGENT
To: SUNEDISON, INC.; SUN EDISON LLC; SOLAICX; NVT, LLC
Reel/Frame 037508/0884 →
SECURITY INTEREST Recorded Aug 11, 2015
From: SUNEDISON, INC.; SUN EDISON LLC; SOLAICX; NVT, LLC
To: GOLDMAN SACHS BANK USA, AS ADMINISTRATIVE AGENT
Reel/Frame 036329/0470 →
CHANGE OF NAME Recorded Jul 27, 2015
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON, INC.
Reel/Frame 036189/0647 →
RELEASE OF SECURITY INTEREST Recorded Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
SECURITY AGREEMENT Recorded Feb 28, 2014
From: SUNEDISON, INC.; SUN EDISON LLC; SOLAICX; NVT, LLC; ENFLEX CORPORATION
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS ADMINISTRATIVE AGENT
Reel/Frame 032372/0610 →
SECURITY AGREEMENT Recorded Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
SECURITY AGREEMENT Recorded Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2012
From: GUPTA, PUNEET; HUANG, YUE; BHUSARAPU, SATISH
To: MEMC ELECTRONIC MATERIALS, INC.
Reel/Frame 027985/0573 →