Manufacturing method of solid-state imaging device and solid-state imaging device

1. A manufacturing method of a solid-state imaging device comprising:

preparing a photoelectric conversion device;

forming an insulating layer on a surface of the photoelectric conversion device;

forming a wire-grid polarizer on a support base;

bonding a forming surface of the wire-grid polarizer on the support base to the insulating layer on the surface of the photoelectric conversion device and

removing the support base from the wire-grid polarizer.

2. The manufacturing method of the solid-state imaging device according to claim 1 ,

wherein the photoelectric conversion device is bonded to the support base by forming the insulating layer made of a silicide on the surface of the photoelectric conversion device, forming a passivation layer including the silicide on a surface of the wire-grid polarizer on the support base and activating the insulating layer and the passivation layer.

3. The manufacturing method of the solid-state imaging device according to claim 1 ,

wherein a transparent base is used as the support base and alignment is performed by using alignment marks formed in the base on the photoelectric conversion's side through the support base at the time of bonding the support base to the photoelectric conversion device.

4. The manufacturing method of the solid-state imaging device according to claim 1 ,

wherein the process of forming the wire-grid polarizer includes a process of forming a metal layer on the whole surface of the support base and a process of processing the metal layer into a grid-array state.

5. The manufacturing method of the solid-state imaging device according to claim 1 ,

wherein the process of forming the wire-grid polarizer includes a process of forming an island-shaped absorption layer on the support base, a process of forming an insulating layer on the whole surface of the support base so as to cover the absorption layer, a process of forming the metal layer on the insulating layer and a process of processing the metal layer and the insulating layer into a grid-array state.

6. The manufacturing method of the solid-state imaging device according to claim 2 , further comprising:

forming an insulating layer between grids of the wire-grid polarizer after forming the wire-grid polarizer.

7. The manufacturing method of the solid-state imaging device according to claim 6 ,

wherein the insulating layer is formed to be lower than the wire-grid polarizer and a convex shape by the wire-grid polarizer is formed on the insulating layer between grids in the process of forming the insulating layer between the grids of the wire-grid polarizer,

a concave portion opposite to the convex portion by the wire-grid polarizer is formed in the process of forming the insulating layer on the surface of the photoelectric conversion device, and

the convex shape by the wire-grid polarizer is aligned with and bonded to the concave portion of the insulating layer on the surface of the photoelectric conversion device.

8. A solid-state imaging device comprising:

a photoelectric conversion device;

an insulating layer formed on the photoelectric conversion device; and

a wire-grid polarizer formed on the insulating layer,

wherein a concave portion is formed in the insulating layer, and

a sidewall of the wire-grid polarizer is formed to touch an inner wall of the concave portion formed on the insulating layer.