IP Library Granted Patent US 8,758,584
Granted Patent B2
US 8,758,584 · App. 13/329,135 · Granted Jun 24, 2014

Electrochemical sensors

Inventors: Carolyn R. Kahn (San Francisco, CA); Elicia Wong (Foster City, CA); James A. Wilkins (San Francisco, CA); Vern Norviel (San Francisco, CA)
Assignee: Sensor Innovations, Inc.
G01N27/302G01N27/4167G01N27/3335
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Quick Facts
Patent No.
US 8,758,584
App. No.
13/329,135
Granted
Jun 24, 2014
Kind
B2
Abstract

Systems and methods are provided for detecting the presence of an analyte in a sample. A solid state electrochemical sensor can include a redox active moiety having an oxidation and/or reduction potential that is sensitive to the presence of an analyte immobilized over a surface of a working electrode. A redox active moiety having an oxidation and/or reduction potential that is insensitive to the presence of the analyte can be used for reference. Voltammetric measurements made using such systems can accurately determine the presence and/or concentration of the analyte in the sample. The solid state electrochemical sensor can be robust and not require calibration or re-calibration.

Claims (25)

1. A sensor for detecting the presence or absence of an analyte, comprising:

a first solid state electrode having a surface having immobilized thereon a layer of a first redox-active moiety, wherein the first redox-active moiety has an oxidation potential and/or a reduction potential that is sensitive to the presence of the analyte; and

a second solid state electrode having a surface having immobilized thereon a layer of a second redox-active moiety and a layer of a polymeric material adjacent to the layer of the second redox-active moiety, wherein the second redox-active moiety has an oxidation potential and/or reduction potential that is sensitive to the presence of the analyte.

2. The sensor of claim 1 , wherein the layer of the polymeric material is a light blocking layer.

3. The sensor of claim 2 , wherein the polymeric material comprises polyethersulphone.

4. The sensor of claim 1 , further comprising a protective layer adjacent to the layer of the polymeric material.

5. The sensor of claim 4 , wherein the protective layer comprises another polymeric material.

6. The sensor of claim 1 , wherein the polymeric material has the formula C 7 HF 13 O 5 S*C 2 F 4 .

7. The sensor of claim 1 , wherein the layer of the polymeric material comprises a porous plastic.

8. The sensor of claim 1 , wherein the first or second solid state electrode comprises carbon.

9. The sensor of claim 1 , wherein the first or second solid state electrode comprises silicon.

10. The sensor of claim 1 , wherein the layer of the polymeric material comprises pores.

11. The sensor of claim 10 , wherein said pores have a pore size between about 0.1 micrometers and 1 micrometer.

12. The sensor of claim 1 , wherein the analyte is hydrogen ion.

13. The sensor of claim 1 , wherein the layer of the polymeric material is an ion selective layer.

14. A solid state sensor for detecting the presence or absence of an analyte, comprising (i) a solid state electrode having a surface having immobilized thereon a layer of a redox-active moiety, (ii) a layer of a polymeric material and (iii) a protective layer adjacent to the layer of the polymeric material, wherein the layer of the polymeric material is porous and covers the layer of the redox-active moiety, wherein the redox-active moiety has an oxidation potential and/or a reduction potential that is directly sensitive to the presence of the analyte, and wherein the redox-active moiety is immobilized on the surface through a covalent interaction with the solid state electrode.

15. The solid state sensor of claim 14 , further comprising a light blocking layer adjacent to the layer of the polymeric material.

16. The solid state sensor of claim 15 , wherein the light blocking layer transmits less than 10% of light incident on the light blocking layer.

17. The solid state sensor of claim 16 , wherein the light blocking layer transmits less than 5% of light incident on the light blocking layer.

18. The solid state sensor of claim 17 , wherein the light blocking layer transmits less than 1% of light incident on the light blocking layer.

19. The solid state sensor of claim 14 , wherein the analyte is hydrogen ion.

20. The solid state sensor of claim 14 , wherein the solid state electrode comprises silicon.

21. The solid state sensor of claim 14 , wherein the layer of the polymeric material is an ion selective layer.

22. The solid state sensor of claim 1 , wherein the solid state electrode is non-metallic.

23. The solid state sensor of claim 14 , wherein the layer of the polymeric material selectively screens off anions and only allows the passage of cations.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2012
From: KAHN, CAROLYN R.; WONG, ELICIA; WILKINS, JAMES A.; MANSOUR, DEAN; NORVIEL, VERN; SIDHU, ROBBIE SINGH
To: SENSOR INNOVATIONS, INC.
Reel/Frame 027990/0979 →
Continuity (3)
Provisional Application 61424040 · Dec 16, 2010
Provisional Application 61550355 · Oct 21, 2011
Related Publication 20120187000A1 · Jul 26, 2012