Articles including anticondensation and/or low-E coatings and/or methods of making the same
View Patent ↗Certain example embodiments of this invention relate to articles including anticondensation and/or low-E coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation and/or low-E coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.
1. An insulating glass (IG) unit, comprising:
first and second substantially parallel spaced apart glass substrates, the first and second substrates providing, in order, first through fourth substantially parallel major surfaces of the IG unit, a gap being defined between the first and second substrates;
wherein a fourth surface of the IG unit supports a first low-E coating comprising a plurality of thin film layers including, in order moving away from the second substrate:
a first layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick,
a layer comprising ITO having an index of refraction of 1.7-2.1 and being 85-125 nm thick, and
a second layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick.
2. The IG unit of claim 1 , wherein the first and second layer comprising silicon oxynitride have indices of refraction of 1.7-1.8.
3. The IG unit of claim 2 , wherein the layer comprising ITO has an index of refraction of 1.8-1.93.
4. The IG unit of claim 1 , wherein the layer comprising ITO has an index of refraction of 1.8-1.93.
5. The IG unit of claim 1 , wherein the first and second layers comprising silicon oxynitride have indices of refraction and thicknesses that vary from one another by no more than 0.1 and 10 nm, respectively.
6. The IG unit of claim 1 , wherein the third surface of the IG unit supports a second low-E coating comprising a plurality of thin film layers including, in order moving away from the second substrate:
a first silicon-based layer;
a first dielectric layer;
a second dielectric layer split by a third dielectric layer so as to form first and second portions of the second dielectric layer;
a metallic or substantially metallic infrared (IR) reflecting layer over and directly contacting the second portion of the second dielectric layer;
an upper contact layer comprising an oxide of Ni and/or Cr directly over and contacting the IR reflecting layer;
a fourth dielectric layer; and
a second silicon-based layer,
wherein the third dielectric layer comprises either titanium oxide or tin oxide.
7. The IG unit of claim 6 , wherein the first dielectric layer is a high refractive index layer comprising an oxide or sub-oxide of titanium.
8. The IG unit of claim 6 , wherein the third and fourth dielectric layers comprise tin oxide.
9. The IG unit of claim 8 , wherein the second dielectric layer comprises zinc oxide.
10. The IG unit of claim 9 , wherein the second layer is split such that the parts thereof have thicknesses that vary by no more than 5% of one another.
11. The IG unit of claim 6 , wherein the first and second silicon-based layers each comprise silicon nitride, the first dielectric layer comprises titanium oxide, the second dielectric layer comprises zinc oxide, the third and fourth dielectric layers each comprise tin oxide, and the IR reflecting layer comprises Ag.
12. The IG unit of claim 6 , wherein the second substrate is heat treated with the first and/or second low-E coatings disposed thereon.
13. The IG unit of claim 6 , wherein the second low-E coating has a SHGC sufficient to bring the U-value of the IG unit to less than or equal to 0.30.
14. A coated article comprising a substrate supporting first and second low-E coatings on opposing major surfaces thereof, respectively, wherein:
the first low-E coating comprises, in order moving away from the substrate:
a first layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick,
a layer comprising ITO having an index of refraction of 1.7-2.1 and being 85-125 nm thick, and
a second layer comprising silicon oxynitride having an index of refraction of 1.5-2.1 and being 50-90 nm thick; and
the second low-E coating comprises, in order moving away from the substrate:
a first silicon-based layer,
a first dielectric layer,
a second dielectric layer split by a third dielectric layer so as to form first and second portions of the second dielectric layer, the third dielectric layer comprising either titanium oxide or tin oxide,
a metallic or substantially metallic infrared (IR) reflecting layer over and directly contacting the second portion of the second dielectric layer,
an upper contact layer comprising an oxide of Ni and/or Cr directly over and contacting the IR reflecting layer,
a fourth dielectric layer, and
a second silicon-based layer.