Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench
An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.
1. An image sensor, comprising:
a semiconductor substrate having a first refractive index;
two photosites in the substrate; and
an isolation region separating the photosites, the isolation region including:
a first trench having a depth of at least two microns and an electrically insulating liner, and at least partially filled with an electrically conductive material, the electrical conductive material having a second refractive index less than the first refractive index; and
a second trench in the electrically conductive material and at least partially filled with an optically isolating material, the optically isolating material having a third refractive index less than the second refractive index.
2. The image sensor according to claim 1 , further comprising a contact coupled to the conductive material and configured to apply a first voltage to a first region of the conductive material.
3. The image sensor according to claim 1 wherein the first and second refractive indices are greater than 3, and the third refractive index is less than 2.
4. The image sensor according to claim 1 wherein a thickness of the conductive material surrounding the second trench is substantially uniform.
5. The image sensor according to claim 1 , further comprising a filter and a microlens above each photosite.
6. The image sensor of claim 1 , further comprising:
a first contact coupled to a first region of the conductive material and configured to apply a first voltage to the first region of the conductive material; and
a second contact coupled to a second region of the conductive material and configured to apply a second voltage to the second region of the conductive material.
7. The image sensor of claim 1 wherein the first and second trenches extend through the semiconductor substrate and the conductive material comprises two regions of conductive material separated by the optically isolating material.
8. A method, comprising:
forming two photosites in a semiconductor substrate, the semiconductor substrate having a first refractive index;
forming a first trench having a depth of at least two microns between the two photosites;
forming an electrically insulating liner on at least the sidewalls of the first trench;
positioning an electrically conductive material in the first trench, the electrically conductive material having a second refractive index less than the first refractive index and a second trench; and
positioning an optically isolating material in the second trench, the optical isolating material having a third refractive index less than the second refractive index.
9. The method according to claim 8 , further comprising:
depositing a dielectric layer, and
forming an electrical contact in the dielectric layer, the contact being coupled to the conductive material.
10. The method according to claim 8 wherein the positioning the conductive material comprises depositing the conductive material using a conformal deposition process to obtain the second trench without etching the conductive material.
11. The method according to claim 8 , further comprising:
depositing a dielectric layer;
forming a first electrical contact in the dielectric layer, the first contact being coupled to a first region of the conductive material; and
forming a second electrical contact in the dielectric layer, the second contact being coupled to a second region of the conductive material.
12. The method of claim 8 wherein the first and second trenches extend through the semiconductor substrate and the conductive material comprises two regions of conductive material separated by the optically isolating material.
13. A device, comprising:
a processor; and
an image sensor communicatively coupled to the processor, the image sensor including:
a semiconductor substrate having a first refractive index;
two photosites in the substrate; and
an isolation region separating the photosites, the isolation region including:
a first trench having a depth of at least two microns and an electrically insulating liner, and at least partially filled with an electrically conductive material, the electrical conductive material having a second refractive index less than the first refractive index; and
a second trench in the electrically conductive material and at least partially filled with an optically isolating material, the optically isolating material having a third refractive index less than the second refractive index.
14. The device of claim 13 wherein the first and second trenches extend through the semiconductor substrate and the conductive material comprises two regions of conductive material separated by the optically isolating material.
15. The device of claim 13 wherein the image sensor further comprises a contact coupled to the conductive material and configured to apply a voltage to the conductive material.
16. The device of claim 13 wherein the image sensor further comprises a filter and a microlens above each photosite.
17. The device of claim 13 wherein the image sensor comprises additional photosites in the substrate and additional isolation regions separating photosites in the substrate.
18. The device of claim 13 , further comprising:
a first contact coupled to a first region of the conductive material and configured to apply a first voltage to the first region of the conductive material; and
a second contact coupled to a second region of the conductive material and configured to apply a second voltage to the second region of the conductive material.
19. A system, comprising:
a semiconductor substrate having a first refractive index;
a plurality of means for sensing photons positioned in the semiconductor substrate; and
means for isolating the plurality of means for sensing photons extending at least two microns into the semiconductor substrate and including;
means for electrically isolating the plurality of means for sensing photons;
means for conducting positioned on the means for electrically isolating the plurality of means for sensing photons, the means for conducting having a second refractive index less than the first refractive index; and
means for optically isolating the plurality of means for sensing photons positioned in the means for conducting and having a third refractive index less than the second refractive index.
20. The system of claim 19 , further comprising means for processing information generated by the plurality of means for sensing photons.
21. An image sensor, comprising:
a semiconductor substrate;
two photosites in the substrate; and
an isolation region separating the photosites, the isolation region including:
a first trench having an electrically insulating liner and at least partially filled with an electrically conductive material; and
a second trench in the electrically conductive material and at least partially filled with an optically isolating material, wherein the first and second trenches extend through the semiconductor substrate and the conductive material comprises two regions of conductive material separated by the optically isolating material.
22. The image sensor according to claim 21 , further comprising a contact coupled to the conductive material and configured to apply a first voltage to a first region of the conductive material.
23. The image sensor according to claim 21 wherein:
the semiconductor substrate has a first refractive index,
the conductive material has a second refractive index,
the optically isolating material has a third refractive index, and
the first index is greater than the second index, and the second index is greater than the third index.