Image sensor with reduced optical crosstalk
A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.
1. A method, comprising:
fabricating an image sensor by,
forming two photosites in a semiconductor substrate;
forming a trench between the photosites;
forming a dielectric liner on one or more sidewalls of the trench; and
positioning a conductive material having a first refractive index on the dielectric liner in the trench, the conductive material enclosing a region having a second refractive index lower than the first index of refraction.
2. The method according to claim 1 wherein the positioning the conductive material in the trench comprises depositing the conductive material on the dielectric liner of the trench until the region is enclosed in the conductive material.
3. The method according to claim 1 wherein the positioning the conductive material in the trench comprises enclosing a gas having the second refractive index in the enclosed region.
4. The method according to claim 1 wherein the positioning the conductive material in the trench comprises using a non-conformal deposition process of the conductive material.
5. The method according to claim 1 wherein the positioning the conductive material in the trench comprises depositing the conductive material so that a thickness of the conductive material on the liner is greater at a first portion of the trench, and thinner at a second portion of the trench.
6. The method according to claim 1 wherein the positioning the conductive material comprises depositing the conductive material using a plasma-enhanced chemical vapor deposition process.
7. The method according to claim 1 , further comprising a step of forming a contact electrically coupled to the conductive material.
8. The method of claim 1 wherein forming the trench comprises forming a trench extending through the semiconductor substrate.
9. An image sensor, comprising:
a semiconductor substrate;
at least two photosites positioned in the substrate; and
an isolation region positioned between the photosites, the isolation region having:
a trench having one or more sidewalls;
a dielectric liner positioned on the one or more sidewalls of the trench;
a conductive region having a first refractive index and positioned on the dielectric liner; and
a region having a second refractive index lower than the first refractive index and enclosed by the conductive region.
10. The image sensor according to claim 9 wherein the enclosed region having the second refractive index comprises a gas.
11. The image sensor according to 9 wherein the conductive material positioned on the one or more sidewalls of the trench has a greater thickness at one end of the trench than at another end of the trench.
12. The image sensor according to claim 9 wherein the first refractive index is greater than 3, and the second refractive index is less than 1.5.
13. The image sensor according to claim 9 , further comprising a contact configured to apply a biasing voltage to the conductive material.
14. The image sensor according to claim 9 , further comprising a plurality of filters and a plurality of microlens coupled to respective photosites.
15. The image sensor of claim 9 wherein the trench extends through the semiconductor substrate.
16. A device, comprising:
a processor; and
an image sensor, the image sensor including:
a semiconductor substrate;
at least two photosites positioned in the substrate; and
an isolation region positioned between the photosites, the isolation region having:
a trench having one or more sidewalls;
a dielectric liner positioned on the one or more sidewalls of the trench;
a conductive region having a first refractive index and positioned on the dielectric liner; and
a region having a second refractive index lower than the first refractive index and enclosed by the conductive region.
17. The device of claim 16 wherein the enclosed region having the second refractive index comprises a gas.
18. The device of claim 16 wherein the conductive material positioned on the one or more sidewalls of the trench has a greater thickness at one end of the trench than at another end of the trench.
19. The device of claim 16 , further comprising a contact configured to apply a biasing voltage to the conductive material.
20. The device of claim 16 wherein the trench extends through the semiconductor substrate.
21. A system, comprising:
a plurality of means for sensing photons;
means for electrically isolating the plurality of means for sensing photons;
means for conducting positioned on the means for electrically isolating the plurality of means for sensing photons; and
means for optically isolating the plurality of means for sensing photons enclosed by the means for conducting.
22. The system of claim 21 , further comprising means for processing information generated by the plurality of means for sensing photons.
23. The system of claim 20 wherein the means for optically isolating the plurality of means for sensing photons comprises a gas enclosed by the means for conducting.