Semiconductor device with damascene bit line and method for manufacturing the same
A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.
1. A semiconductor device comprising:
first conductive patterns adjacent to each other and isolated by a trench including first and second trenches;
a second conductive pattern formed in the first trench; and
an insulating pattern fully filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern,
wherein the second trench is defined under the first trench, has a critical dimension smaller than that of the first trench and extends into an isolation layer formed in a substrate,
wherein the second conductive pattern includes a protruded portion directly contacted to an active region formed in the substrate and defined by the isolation layer,
wherein the second conductive pattern extends in a first direction and the protruded portion is protruded in a second direction which is perpendicular to the first direction.
2. The semiconductor device of claim 1 , wherein the second trench is defined under the first trench and has a critical dimension gradually decreasing toward a bottom thereof.
3. The semiconductor device of claim 1 , wherein the insulating pattern comprises a first insulating pattern formed under the second conductive pattern and a second insulating pattern formed between the first conductive patterns and the second conductive pattern, and
wherein the first insulating pattern has a critical dimension smaller than that of the second conductive pattern.
4. The semiconductor device of claim 1 , wherein the insulating pattern comprises a first insulating pattern formed on a bottom and sidewalls of the trench and a second insulating pattern formed between the second conductive pattern and the first insulating pattern.
5. A semiconductor device comprising:
a pair of adjacent plugs isolated by a trench including first and second trenches;
a bit line formed in the first trench; and
an insulating layer fully filling the second trench under the bit line and formed between the adjacent plugs and the bit line,
the second trench is defined under the first trench, has a critical dimension smaller than that of the first trench and extends into an isolation layer formed in a substrate,
wherein the bit line includes a protruded portion directly contacted to an active region formed in the substrate and defined by the isolation layer,
wherein the bit line extends in a first direction and the protruded portion is protruded in a second direction which is perpendicular to the first direction.
6. The semiconductor device of claim 5 , wherein the second trench is defined under the first trench and has a critical dimension gradually decreasing toward a bottom thereof.
7. The semiconductor device of claim 5 , wherein the insulating layer comprises a first insulating layer formed on a bottom and sidewalls of the trench and a second insulating layer formed between the bit line and the first insulating layer.
8. The semiconductor device of claim 7 , wherein the first insulating layer comprises a nitride layer, and the second insulating layer comprises an oxide layer or a nitride layer.
9. The semiconductor device of claim 5 , wherein the isolation layer isolates adjacent active regions.
10. The semiconductor device of claim 9 , wherein the adjacent plugs include storage node contact plugs formed over the active regions and isolated by the trench.
11. The semiconductor device of claim 5 , wherein the bit line is filling the first trench over the insulating layer.
12. The semiconductor device of claim 5 , wherein the second trench is defined under the first trench and has a critical dimension gradually decreasing toward a bottom thereof.
13. The semiconductor device of claim 5 , wherein the insulating layer comprises a first insulating layer formed on a bottom and sidewalls of the first trench and a second insulating layer formed under the bit line and the first insulating layer.
14. The semiconductor device of claim 1 , wherein the insulating pattern has a thickness that gap-fills the second trench.
15. The semiconductor device of claim 5 , wherein the insulating pattern has a thickness that gap-fills the second trench.
16. The semiconductor device of claim 1 , wherein the protruded portion is not overlapped with the first conductive patterns.
17. The semiconductor device of claim 3 , wherein the isolation layer isolates adjacent active regions, the first insulating pattern is formed in the first conductive patterns and the isolation layer.
18. The semiconductor device of claim 5 , wherein the protruded portion is not overlapped with the adjacent plugs.
19. The semiconductor device of claim 9 , wherein the insulating layer in the second trench is formed in the plugs and the isolation layer.