PHOTOVOLTAIC DEVICE AND METHOD OF MAKING
A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.
1 . A photovoltaic device, comprising:
a first semiconductor layer;
a second semiconductor layer; and
an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic layer comprises cadmium, tellurium and oxygen.
2 . The photovoltaic device of claim 1 , wherein the first semiconductor layer or the second semiconductor layer is a p-type semiconductor layer.
3 . The photovoltaic device of claim 1 , wherein the first semiconductor layer or the second semiconductor layer is an n-type semiconductor layer.
4 . The photovoltaic device of claim 1 , wherein the first semiconductor layer comprises cadmium sulfide, cadmium selenide, zinc selenide, zinc sulfide, indium selenide, indium sulfide, zinc oxihydrate, or a combination thereof.
5 . The photovoltaic device of claim 1 , wherein the first semiconductor layer has a thickness in a range from about 50 nanometers to about 100 nanometers.
6 . The photovoltaic device of claim 1 , wherein the first semiconductor layer has an effective carrier density in a range from about 1×10 14 cm −3 to about 1×10 20 cm −3 .
7 . The photovoltaic device of claim 1 , wherein the second semiconductor layer comprises cadmium telluride, zinc telluride, magnesium telluride, manganese telluride, beryllium telluride, mercury telluride, arsenic telluride, antimony telluride, copper telluride, cadmium zinc telluride, cadmium manganese telluride, cadmium magnesium telluride, copper indium sulphide, copper indium gallium selenide, copper zinc tin sulphide or a combination thereof.
8 . The photovoltaic device of claim 1 , wherein the second semiconductor layer comprises amorphous Si:H, amorphous SiC:H, crystalline Si, microcrystalline Si:H, microcrystalline SiGe:H, amorphous SiGe:H, amorphous Ge, microcrystalline Ge, GaAs, BaCuSF, BaCuSeF, BaCuTeF, LaCuOS, LaCuOSe, LaCuOTe, LaSrCuOS, LaCuOSe 0.6 Te 0.4 , BiCuOSe, BiCaCuOSe, PrCuOSe, NdCuOS, Sr 2 Cu 2 ZnO 2 S 2 , Sr 2 CuGaO 3 S, (Zn,Co,Ni) 3 O 4 , and combinations thereof.
9 . The photovoltaic device of claim 1 , wherein the second semiconductor layer has a thickness in a range from about 50 nanometers to about 200 nanometers.
10 . The photovoltaic device of claim 1 , wherein the second semiconductor layer has an effective carrier density in a range from about 1×10 16 cm −3 to about 1×10 21 cm −3 .
11 . The photovoltaic device of claim 1 , wherein the second semiconductor layer has an effective carrier density in a range from about 1×10 18 cm −3 to about 1×10 21 cm −3 .
12 . The photovoltaic device of claim 1 , wherein the intrinsic layer comprises cadmium telluride.
13 . The photovoltaic device of claim 1 , wherein the intrinsic layer comprises a concentration of oxygen at least about 1×10 19 cm −3 .
14 . The photovoltaic device of claim 13 , wherein the intrinsic layer comprises a concentration of oxygen ranging from about 1×10 19 cm −3 to about 1×10 21 cm −3 .
15 . The photovoltaic device of claim 1 , wherein the intrinsic layer has a thickness in a range from about 0.5 micron to about 3 microns.
16 . The photovoltaic device of claim 1 , wherein the intrinsic layer has an effective carrier density in a range from about 5×10 12 cm −3 to about 1×10 14 cm −3 .
17 . The photovoltaic device of claim 1 , further comprising a buffer layer interposed between the intrinsic layer and the second semiconductor layer.
18 . The photovoltaic device of claim 1 , wherein the buffer layer comprises cadmium mangnesium telluride (CdMgTe), cadmium manganese telluride (CdMnTe) or a combination thereof.
19 . The photovoltaic device of claim 1 , wherein the first semiconductor layer, the second semiconductor layer, or both layers further comprise oxygen.
20 . The photovoltaic device of claim 19 , wherein the amount of oxygen is less than about 25 atomic percent.
21 . The photovoltaic device of claim 1 , wherein the first semiconductor layer is disposed on a first electrically conductive layer.
22 . The photovoltaic device of claim 1 , wherein a second electrically conductive layer is disposed on the second semiconductor layer.
23 . A photovoltaic device, comprising:
a support;
a first electrically conductive layer disposed on the support;
a first semiconductor layer disposed on the first electrically conductive layer;
a second semiconductor layer disposed on the first semiconductor layer;
a second electrically conductive layer disposed on the second semiconductor layer; and
an intrinsic layer interposed between the first type semiconductor layer and the second type semiconductor layer, wherein the intrinsic layer comprises cadmium, tellurium and oxygen.
24 . A photovoltaic module comprising a plurality of photovoltaic devices as defined in claim 23 .
25 . A method, comprising:
disposing an intrinsic layer on a first semiconductor layer, wherein the intrinsic layer comprises cadmium, tellurium, and oxygen;
wherein disposing the intrinsic layer comprises:
disposing the intrinsic layer on the first semiconductor layer in an oxygen-containing environment, and
disposing a second semiconductor layer on the intrinsic layer.
26 . The method of claim 25 , wherein the oxygen-containing environment comprises 100 percent oxygen.