Fabricating solar cells with silicon nanoparticles
View Patent ↗A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.
1. A method of fabricating a solar cell, the method comprising:
forming doped silicon nanoparticles over a solar cell substrate;
coating the doped silicon nanoparticles with a nanoparticle passivation film;
impinging a laser beam on the doped silicon nanoparticles in a laser contact process to form a contact hole through the doped silicon nanoparticles to an emitter of the solar cell; and
forming an electrically conductive contact in the contact hole such that the electrically conductive contact directly contacts a surface of the emitter of the solar cell.
2. The method of claim 1 wherein the substrate comprises a silicon substrate.
3. The method of claim 1 further comprising:
forming a passivation film on the solar cell substrate prior to forming the doped silicon nanoparticles over the solar cell substrate.
4. The method of claim 3 wherein the doped silicon nanoparticles are formed on the passivation film.
5. The method of claim 4 wherein the passivation film comprises silicon dioxide.
6. The method of claim 1 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
forming silicon dioxide on a surface of individual or clusters of the doped silicon nanoparticles.
7. The method of claim 1 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
depositing silicon nitride on a surface of individual or clusters of the doped silicon nanoparticles.
8. The method of claim 1 further comprising:
diffusing dopants from the doped silicon nanoparticles into the solar cell substrate to form the emitter prior to impinging the laser beam on the doped silicon nanoparticles in the laser contact process to form the contact hole to the emitter of the solar cell.
9. The method of claim 1 wherein the emitter is formed from melted doped silicon nanoparticles when the laser beam is impinged on the doped silicon nanoparticles in the laser contact process to form the contact hole to the emitter.
10. The method of claim 1 further comprising:
forming a cap layer on the doped silicon nanoparticles and wherein the contact hole goes through the cap layer.
11. A method of forming contact holes of solar cells, the method comprising:
forming doped silicon nanoparticles over a solar cell substrate;
diffusing dopants from the doped silicon nanoparticles to form an emitter;
coating the doped silicon nanoparticles with a nanoparticle passivation film; and
impinging a laser beam on the doped silicon nanoparticles in a laser contact process to form a contact hole through the doped silicon nanoparticles to the emitter.
12. The method of claim 11 wherein the doped silicon nanoparticles are coated with the nanoparticle passivation film prior to diffusing the dopants from the doped silicon nanoparticles to form the emitter.
13. The method of claim 11 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
forming silicon dioxide on a surface of individual or clusters of the doped silicon nanoparticles.
14. The method of claim 11 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
depositing silicon nitride on a surface of individual or clusters of the doped silicon nanoparticles.
15. The method of claim 11 further comprising:
forming a cap layer on the doped silicon nanoparticles and wherein the contact hole goes through the cap layer.
16. A method of fabricating a solar cell, the method comprising:
forming doped silicon nanoparticles over a substrate of the solar cell;
coating the doped silicon nanoparticles with a nanoparticle passivation film;
melting portions of the doped silicon nanoparticles with a laser beam to form an emitter of the solar cell with the melted portions of the doped silicon nanoparticles and to form a contact hole to the emitter of the solar cell; and
forming a cap layer on the doped silicon nanoparticles and wherein the contact hole goes through the cap layer.
17. The method of claim 16 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
forming silicon dioxide on a surface of individual or clusters of the doped silicon nanoparticles.
18. The method of claim 16 wherein coating the doped silicon nanoparticles with the nanoparticle passivation film comprises:
depositing silicon nitride on a surface of individual or clusters of the doped silicon nanoparticles.
19. A method of fabricating a solar cell, the method comprising:
forming doped silicon nanoparticles over a substrate of the solar cell;
using the doped silicon nanoparticles as a dopant to form an emitter of the solar cell in the substrate; and
impinging a laser beam on the doped silicon nanoparticles in the laser contact process to form a contact hole through the doped silicon nanoparticles to the emitter of the solar cell.
20. The method of claim 19 wherein using the doped silicon nanoparticles to form an emitter of the solar cell further comprises:
forming the emitter of the solar cell in the substrate by either diffusing dopants from the doped silicon nanoparticles or melting the doped silicon nanoparticles based on a laser contact process used for forming contact holes of solar cells.
21. The method of claim 19 further comprising:
forming an electrically conductive contact into the contact hole such that the electrically conductive contact directly contacts a surface of the emitter of the solar cell.
22. The method of claim 19 further comprising:
coating the doped silicon nanoparticles with a nanoparticle passivation film.
23. The method of claim 22 further comprising:
forming a passivation film on the substrate prior to forming the doped silicon nanoparticles over the substrate; and
forming a cap layer on the doped silicon nanoparticles and wherein the contact hole goes through the cap layer.