E-mode HFET device
The present invention describes a transistor based on a Hetero junction FET structure, where the metal gate has been replaced by a stack formed by a highly doped compound semiconductor and an insulating layer in order to achieve enhancement mode operation and at the same time drastically reduce the gate current leakage. The combination of the insulating layer with a highly doped semiconductor allows the tuning of the threshold voltage of the device at the desired value by simply changing the composition of the semiconductor layer forming the gate region and/or its doping allowing a higher degree of freedom. In one of the embodiment, a back-barrier layer and a heavily doped threshold tuning layer are used to suppress Short Channel Effect phenomena and to adjust the threshold voltage of the device at the desired value. The present invention can be realized both with polar and non-polar (or semi-polar) materials.
1. A semiconductor field effect transistor comprising:
at least one compound semiconductor layer, formed with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compounds semiconductors;
at least one dielectric layer formed above at least a portion of at least one of said at least one compound semiconductor layer;
at least one semiconductor gate region formed above at least a portion of at least one of said at least one dielectric layer;
a source region and drain region;
wherein said semiconductor field effect transistor is an hetero-structure field effect transistor;
wherein said semiconductor gate region is a compound semiconductor region, formed with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compound semiconductors;
wherein said semiconductor field effect transistor is an enhancement mode device;
wherein at least a portion of at least one of said at least one semiconductor gate region is in physical contact with at least a portion of said at least one dielectric layer;
wherein at least one of said at least one semiconductor gate region is heavily doped, and
wherein, when said semiconductor field effect transistor is a n-channel device and said semiconductor gate region is not at least partially overlapped with at least a portion of at least one of said source and drain regions, said semiconductor gate region is doped with n-type impurities.
2. The semiconductor field effect transistor of claim 1 , further comprising a carrier transport layer;
wherein at least one of said at least one compound semiconductor layer is a barrier layer;
wherein said barrier layer is formed above at least a portion of said carrier transport layer, and
whereby a conductive channel is formed in said carrier transport layer when said semiconductor field effect transistor is turned on.
3. The semiconductor field effect transistor of claim 1 , wherein at least one of said at least one compound semiconductor layer is a carrier transport layer, and
whereby a conductive channel is formed in said carrier transport layer when said semiconductor field effect transistor is turned on.
4. The semiconductor field effect transistor of claim 1 , wherein at least one of said at least one semiconductor gate region is formed with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compounds semiconductors.
5. The semiconductor field effect transistor of claim 1 , further comprising at least one back-barrier layer;
wherein at least one of said at least one compound semiconductor layer is a carrier transport layer;
wherein said back-barrier layer is formed under said carrier transport layer, and
whereby a conductive channel is formed in said carrier transport layer when said semiconductor field effect transistor is turned on.
6. The semiconductor field effect transistor of claim 1 , further comprising at least one heavily doped threshold voltage tuning layer.
7. The semiconductor field effect transistor of claim 1 , wherein said gate region is at least partially overlapped with at least a portion of at least one of said source and drain regions.
8. The semiconductor field effect transistor of claim 1 , wherein at least one of said source and drain regions comprises a lightly doped region and a highly conductive region.
9. The semiconductor field effect transistor of claim 1 further including an N-face configuration comprising at least one compound barrier layer under at least one of said at least one compound semiconductor layer.
10. The semiconductor field effect transistor of claim 1 , further comprising
a carrier transport layer;
at least one highly doped region above at least a portion of at least one of said at least one compound semiconductor layer;
wherein at least one of said at least one compound semiconductor layer is a barrier layer;
wherein said barrier layer is formed above at least a portion of said carrier transport layer.
11. A method for manufacturing a semiconductor field effect transistor comprising:
forming at least one compound semiconductor layer, with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compounds semiconductors;
forming at least one dielectric layer above at least a portion of at least one of said at least one compound semiconductor layer;
forming at least one semiconductor gate region above at least a portion of at least one of said at least one dielectric layer, and
forming a source and a drain region;
wherein said semiconductor field effect transistor is an hetero-structure field effect transistor;
wherein said semiconductor gate region is a compound semiconductor region, formed with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compound semiconductors;
wherein said semiconductor field effect transistor is an enhancement mode device;
wherein at least a portion of at least one of said at least one semiconductor gate region is in physical contact with at least a portion of said at least one dielectric layer;
wherein at least one of said at least one semiconductor gate region is heavily doped, and
wherein, when said semiconductor field effect transistor is a n-channel device and none of said source and drain regions is self-aligned with said semiconductor gate region, said semiconductor gate region is doped with n-type impurities.
12. The method of claim 11 , wherein said semiconductor field effect transistor comprises at least one back-barrier layer;
wherein at least one of said at least one compound semiconductor layer is a carrier transport layer;
wherein said back-barrier layer is formed under said carrier transport layer, and
whereby a conductive channel is formed in said carrier transport layer when said semiconductor field effect transistor is turned on.
13. The method of claim 11 , wherein said semiconductor field effect transistor comprises at least one heavily doped threshold voltage tuning layer.
14. The method of claim 11 , wherein at least one of said source and drain regions is formed self-aligned with at least one of said at least one semiconductor gate region.
15. The method of claim 11 , further comprising forming at least one compound barrier layer under at least one of said at least one compound semiconductor layer;
wherein said semiconductor field effect transistor has a N-face configuration.
16. A semiconductor field effect transistor comprising:
at least one compound semiconductor layer, formed with at least one of the semiconductor materials belonging to the group comprising III-V and II-VI compounds semiconductors;
at least one gate region;
a source and a drain region, and at least one heavily doped threshold voltage tuning layer;
wherein, when said semiconductor field effect transistor is a n-channel device, said doped threshold voltage tuning layer is doped with p-type impurities;
wherein, when said semiconductor field effect transistor is a p-channel device, said doped threshold voltage tuning layer is doped with n-type impurities, and
wherein said semiconductor field effect transistor is an enhancement mode device.
17. The semiconductor field effect transistor of claim 16 , further comprising at least one back-barrier layer;
wherein at least one of said at least one compound semiconductor layer is a carrier transport layer;
wherein said back-barrier layer is formed under said carrier transport layer, and
whereby a conductive channel is formed in said carrier transport layer when said semiconductor field effect transistor is turned on.
18. The semiconductor field effect transistor of claim 16 , wherein at least one of said source and drain regions is
at least partially overlapped with at least a portion of at least one of said at least one gate region.
19. The semiconductor field effect transistor of claim 16 , further comprising at least a dielectric layer between said compound semiconductor layer and said gate region, wherein at least one of said at least one gate region is a highly conductive region.
20. The semiconductor field effect transistor of claim 16 further including an N-face configuration comprising at least one compound barrier layer under at least one of said at least one compound semiconductor layer.