IP Library Granted Patent US 9,110,314
Granted Patent B2
US 9,110,314 · App. 13/339,238 · Granted Aug 18, 2015

Optical modulator and a method of forming the same

Inventors: Xiaoguang Tu (Singapore, SG); Tsung-Yang Jason Liow (Singapore, SG); Guo Qiang Patrick Lo (Singapore, SG)
Assignee: Agency for Science, Technology and Research
G02F1/025
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Quick Facts
Patent No.
US 9,110,314
App. No.
13/339,238
Granted
Aug 18, 2015
Kind
B2
Abstract

According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.

Claims (23)

1. An optical modulator, comprising:

a depletion region comprising a junction between a first conductivity type portion and a second conductivity type portion, the first conductivity type portion and the second conductivity type portion being in contact with each other;

a first intrinsic region; and

a second intrinsic region; and

wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region, and in contact with the first intrinsic region and the second intrinsic region,

wherein the first intrinsic region is in contact with the first conductivity type portion,

wherein the first intrinsic region comprises dopants of a first conductivity type and dopants of a second conductivity type, wherein a concentration of the dopants of the first conductivity type is higher than a concentration of the dopants of the second conductivity type,

wherein the second intrinsic region is in contact with the second conductivity type portion,

wherein the second intrinsic region comprises dopants of the first conductivity type and dopants of the second conductivity type, wherein a concentration of the dopants of the second conductivity type is higher than a concentration of the dopants of the first conductivity type, and

wherein the first conductivity type and the second conductivity type are opposite conductivity types.

2. The optical modulator as claimed in claim 1 , wherein the concentration of the dopants of the first conductivity type in the first intrinsic region is lower than a concentration of dopants provided in the first conductivity type portion of the junction.

3. The optical modulator as claimed in claim 1 , wherein the concentration of the dopants of the second conductivity type in the second intrinsic region is lower than a concentration of dopants provided in the second conductivity type portion of the junction.

4. The optical modulator as claimed in claim 1 , wherein the first conductivity type portion and the second conductivity type portion of the junction are configured to have different widths.

5. The optical modulator as claimed in claim 1 , wherein the first conductivity type portion is configured to have a smaller width than a width of the second conductivity type portion.

6. The optical modulator as claimed in claim 1 , further comprising:

a first slab doped with dopants of the first conductivity type, wherein the first slab is coupled to the first conductivity type portion of the junction; and

a second slab doped with dopants of the second conductivity type, wherein the second slab is coupled to the second conductivity type portion of the junction.

7. The optical modulator as claimed in claim 6 , wherein the first slab comprises dopants at a concentration substantially equal or higher than a concentration of dopants in the first conductivity type portion of the junction.

8. The optical modulator as claimed in claim 6 , wherein the second slab comprises dopants at a concentration substantially equal or higher than a concentration of dopants in the second conductivity type portion of the junction.

9. The optical modulator as claimed in claim 1 , further comprising a substrate, wherein the depletion region is disposed on the substrate, and wherein the junction of the depletion region is arranged at least substantially perpendicular to the substrate.

10. The optical modulator as claimed in claim 1 , further comprising a substrate, wherein the depletion region is disposed on the substrate, and wherein the junction of the depletion region is arranged at least substantially parallel to the substrate.

11. The optical modulator as claimed in claim 1 , wherein the depletion region is configured to form an active region of the modulator for propagation of an optical mode.

12. The optical modulator as claimed in claim 11 , further comprising a substrate, wherein the depletion region is disposed on the substrate, and wherein the junction of the depletion region is arranged at least substantially perpendicular to the substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2019
From: THE AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
To: ADVANCED MICRO FOUNDRY PTE. LTD.
Reel/Frame 050071/0933 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2012
From: TU, XIAOGUANG; LIOW, TSUNG-YANG JASON; LO, GUO QIANG PATRICK
To: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
Reel/Frame 028026/0785 →
Priority Claims (1)
SG 201009756 · Dec 29, 2010 · national
Continuity (1)
Related Publication 20120189239A1 · Jul 26, 2012