Patterned capacitor ground shield for inductor in an integrated circuit
View Patent ↗Integrated circuits are disclosed including at least one inductor-capacitor component, where each of the inductor-capacitor components includes an inductor and a capacitor constructed between the inductor and a substrate. The inductor includes at least one metal loop over a shield pattern forming a first capacitor terminal over patterned oxide layer with a second capacitor layer between the patterned oxide layer and the substrate.
1. A method of manufacturing an integrated circuit, comprising the step of:
forming an inductor-capacitor component with an inductor as at least one metal loop over a capacitor on top of a substrate to create said integrated circuit;
wherein the step forming said inductor-capacitor component further comprises the steps of:
depositing/etching to create a shield pattern layer of said capacitor with a patterned oxide layer between a substrate and said pattern layer;
depositing/etching to create a second capacitor layer of said capacitor in said substrate and near a boundary of at least one member of the group consisting of said shield pattern layer and said patterned oxide layer; and
depositing/etching on top of said shield pattern layer to create said metal loop for an inductor.
2. The method of claim 1 , wherein said shield pattern layer is composed of polysilicon.
3. The method of claim 1 , wherein said patterned oxide layer is composed of silicon dioxide.
4. The method of claim 1 , wherein the step forming said inductor-capacitor circuit uses a CMOS semiconductor process.
5. The method of claim 1 , wherein the step forming said inductor-capacitor circuit uses a gallium arsenide semiconductor process.
6. The integrated circuit as a product of the process of claim 1 .