System and method for transferring substrates in large scale processing of CIGS and/or CIS devices
View Patent ↗The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.
1. A method for fabricating a copper indium diselenide semiconductor film comprising:
providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrates including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening;
transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening;
introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. and initiating formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;
maintaining the temperature at about the second temperature for a period of time;
removing at least the selenide species from the furnace;
introducing a hydrogen sulfide species into the furnace;
increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525° C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film.
2. The method of claim 1 further comprising removing the plurality of substrates from the furnace using a transferring device, the transferring device including at least a second elongated member that is configured to go through at least the second opening.
3. The method of claim 1 further comprising removing the peripheral region.
4. The method of claim 1 wherein the copper and indium composite structure further comprises gallium.
5. The method of claim 1 wherein a first amount of the selenium species is replaced by a second amount of the sulfur species in the copper indium diselenide film.
6. The method of claim 1 wherein the second temperature ranges from about 390° C. to about 410° C.
7. The method of claim 1 wherein the gaseous species comprises H2Se.
8. The method of claim 1 wherein:
the holding apparatus includes a plurality of elongateds members, the plurality of elongated members includes a second elongated member;
the first elongated member is configured to hang a first set of substrates, the first set of substrates including less than 8 substrates;
the second elongated member configured to hang a second set of substrates, the second set of substrates including less than 8 substrates.
9. The method of claim 1 wherein the carrier gas comprises nitrogen gas.
10. The method of claim 1 wherein the furnace is characterized by a temperature profile having a uniformity of about less than 5% difference within the furnace.
11. The method of claim 1 wherein each of the substrates is maintained in a substantially planar configuration free from warp or damage.
12. The method of claim 1 further comprising maintaining the hydrogen sulfide species to a concentration ranging from about 10% to about 25% of a total volume within the furnace.
13. The method of claim 1 wherein the removing of the selenide species from the furnace occurs until the furnace is in a vacuum.
14. The method of claim 1 wherein the substrates further comprises a gallium material.
15. The method of claim 1 wherein the copper and indium composite structure comprises a copper and indium alloyed material.
16. The method of claim 1 wherein the copper and indium composite structure comprises a layer of copper material and a layer of indium material.