Coherent spin field effect transistor
A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co 3 O 4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.
1. A coherent spin field effect transistor (coherent spin-FET) comprising a ferromagnetic base layer or gate, a magnetic oxide layer overlaying said base layer, a layer of graphene grown directly on said magnetic oxide layer by electron beam epitaxy, chemical vapor deposition or physical vapor deposition, a separated source and drain both in electrical contact with said graphene layer, wherein polarization of ions within said magnetic oxide layer, overlaying said base layer, and adjacent said graphene layer is ferromagnetic, even if polarization within said base layer is anti-ferromagnetic.
2. The coherent spin-FET of claim 1 , wherein said magnetic oxide layer is comprised of an oxide selected from the group consisting of Co 3 O 4 , Fe 3 O 4 , CoFe 2 O 4 , Cr 2 O 3 and BaFe 2 O 4 .
3. The coherent spin-FET of claim 2 , wherein said magnetic oxide is chrome oxide.
4. The coherent spin-FET of claim 2 , wherein said source and drain comprise chrome oxide.
5. The coherent spin-FET of claim 2 , wherein said ferromagnetic base layer is comprised of cobalt and said magnetic oxide is comprised of chrome oxide.
6. The coherent spin-FET of claim 1 , wherein the ferromagnetic gate has an axis of magnetic polarization that is easily switchable and has a low coercive field and is ferromagnetic at 24° C.
7. The coherent spin-FET of claim 1 , wherein said gate is comprised of cobalt deposited on a substrate, said magnetic oxide layer is comprised of Co 3 O 4 less than 10 monolayers (ML) thick, and said graphene is no more than 6 monolayers (ML) thick, wherein said source and drain are comprised of cobalt.
8. The coherent spin-FET of claim 7 , wherein said substrate is comprised of aluminum oxide, gallium arsenide or silicon.
9. The coherent spin-FET of claim 8 , wherein said substrate is comprised of silicon.