Light emitting device
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
1. A semiconductor light emitting device comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and
an electron blocking layer between the active layer and the second conductive semiconductor layer,
wherein the active layer includes a plurality of well layers and barrier layers, and
an outermost barrier layer of the barrier layers includes:
a plurality of first layers; and
a plurality of second layers between the plurality of first layers in an alternating manner,
wherein a lowermost layer of the outermost barrier layer is one of the first layers, and an uppermost layer of the outermost barrier layer is one of the first layers, the first layer that is the lowermost layer of the outermost barrier layer contacts one of the well layer, and the first layer that is the uppermost layer of the outermost barrier layer contacts the electron blocking layer,
wherein a bandgap of the first layer of the outermost barrier layer is wider than a bandgap of the second layer of the outermost barrier layer,
wherein the plurality of first layers have different bandgaps from each other,
wherein a bandgap of the second layer of the outermost barrier layer is substantially same as a bandgap of the well layer, and the bandgap of the second layer of the outermost barrier layer is smaller than a bandgap of the electron blocking layer,
wherein the effective bandgap of the outermost barrier layer is substantially equal to the bandgap of the electron blocking layer.
2. The semiconductor light emitting device of claim 1 , wherein the second conductive semiconductor layer includes a p-type dopant.
3. The semiconductor light emitting device of claim 2 , wherein the electron blocking layer has a bandgap at least equal to or wider than a bandgap of the barrier layers of the active layer.
4. The semiconductor light emitting device of claim 1 , wherein the first layers are different from the second layers in thickness, respectively.
5. The semiconductor light emitting device of claim 1 , wherein the first layers are different from the second layers in bandgaps, respectively.
6. The semiconductor light emitting device of claim 1 , wherein the first layers have a same thickness, and the second layers are changed in thickness.
7. The semiconductor light emitting device of claim 1 , wherein the first layers are changed in thickness, and the second layers have a same thickness.
8. The semiconductor light emitting device of claim 1 , wherein the first layers are changed in thickness, and the second layers are changed in thickness.
9. The semiconductor light emitting device of claim 1 , wherein the first layers have a same thickness, and the second layers have a same thickness.
10. The semiconductor light emitting device of claim 1 , wherein the first layers have a same barrier height, and the second layers are changed in barrier height.
11. The semiconductor light emitting device of claim 1 , wherein the first layers are changed in barrier height, and the second layers have a same barrier height.
12. The semiconductor light emitting device of claim 1 , wherein the first layers are changed in barrier height, and the second layers are changed in barrier height.
13. The semiconductor light emitting device of claim 1 , wherein the first layers have a same barrier height, and the second layers have a same barrier height.
14. The semiconductor light emitting device of claim 1 , wherein the plurality of first layers have different bandgaps from each other between a bandgap of the well layer and a bandgap of the electron blocking layer.
15. The semiconductor light emitting device of claim 1 , wherein the plurality of first layers are varied with each other between a bandgap of the well layer and a bandgap of the electron blocking layer.
16. The semiconductor light emitting device of claim 1 , wherein the lowermost layer of the outermost barrier layer has a bandgap between a bandgap of the well layer and a bandgap of the barrier layer other than the outermost barrier layer, and the uppermost layer of the outermost barrier layer has a bandgap between the bandgap of the barrier layer other than the outermost barrier layer and a bandgap of the electron blocking layer.
17. The semiconductor light emitting device of claim 1 , wherein the lowermost layer of the outermost barrier layer has a bandgap between a bandgap of the barrier layer other than the outermost barrier layer and a bandgap of the electron blocking layer, and the uppermost layer of the outermost barrier layer has a bandgap between a bandgap of the well layer and a bandgap of the barrier layer other than the outermost barrier layer.
18. A semiconductor light emitting device comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and
an electron blocking layer between the active layer and the second conductive semiconductor layer,
wherein the active layer includes a plurality of well layers and barrier layers, and
an outermost barrier layer of the barrier layers includes:
a plurality of first layers; and
a plurality of second layers having bandgaps different from that of the first layer, and the plurality of second layers being provided between the plurality of first layers in an alternating manner,
wherein a lowermost layer of the outermost barrier layer is one of the first layers, and an uppermost layer of the outermost barrier layer is one of the first layers, the first layer that is the lowermost layer of the outermost barrier layer contacts one of the well layers, and the first layer that is the uppermost layer of the outermost barrier layer contacts the electron blocking layer,
wherein a bandgap of the first layer of the outermost barrier layer is wider than a bandgap of the second layer of the outermost barrier layer,
wherein the plurality of first layers have different bandgaps from each other,
wherein a bandgap of the second layer of the outermost barrier layer is substantially same as a bandgap of the well layer, and the bandgap of the second layer of the outermost barrier layer is smaller than a bandgap of the electron blocking layer,
wherein the effective bandgap of the outermost barrier layer is substantially equal to the bandgap of the electron blocking layer.
19. The semiconductor light emitting device of claim 18 , wherein the second conductive semiconductor layer includes a p-type dopant.
20. The semiconductor light emitting device of claim 18 , wherein the first layer and the second layer are each positioned in a bandgap between a bandgap of the well layer and a bandgap of the electron block layer.
21. The semiconductor light emitting device of claim 18 , wherein the first layer has the same bandgap as that of the barrier layer other than the outermost barrier layer.
22. The semiconductor light emitting device of claim 18 , wherein the electron blocking layer has a bandgap at least equal to or wider than a bandgap of the barrier layers of the active layer.
23. The semiconductor light emitting device of claim 18 , wherein the outermost barrier layer comprises a super lattice structure consisting of repeatedly alternating the first layer and the second layer.